NTU SPMS Participates in 22-nm RRAM Research Collaboration

The School of Physical and Mathematical Sciences (SPMS) at Nanyang Technological University, Singapore, is collaborating with dorsaVi Ltd and Taiwan’s Industrial Technology Research Institute (ITRI) on a research programme to advance resistive random-access memory (RRAM) technology to the 22-nanometre (22-nm) technology node.

The collaboration builds on RRAM intellectual property developed at NTU and focuses on the advancing versatile, CMOS-compatible RRAM devices and architectures. The programme supports research into RRAM technology with multi-level cell capability for low-power memory, compute-in-memory, neuromorphic computing and operation in harsh environment, with potential applications in robotics and edge artificial intelligence.

This work forms part of NTU SPMS’ ongoing engagement in semiconductor and memory research in collaboration with international research institutes and industry partners.