IC circuitry Magnetic RAM

Novel IC Scheme Based on Magnetic Logic Device – Spin-Orbit Torque (SOT) Driven Logic

Synopsis

Embedded systems integrate magnetic-RAM to reduce data processing latency, challenging silicon-based CMOS. Spin-orbit torque enables multi-stage logic operations, enhancing performance and reducing power consumption in IC circuitry with embedded magnetic RAM.


Opportunity

In embedded systems, integrating non-volatile memory (NVM) is trending to reduce data processing latency. Magnetic RAM introduces new challenges to silicon-based CMOS, prompting the adoption of magnetic device-based logic and enabling magnetic logic circuitry in tech nodes.


Technology  

This invention  uses spin-orbit torque (SOT) in magnetic devices for logic processing. A single SOT device enables multi-stage logic operations, such as AND, NAND, XOR, and XNOR, by manipulating three parameters across a nanowire Hall cross-bar structure comprising: 

  • Magnetic field
  • Write current 
  • “Probing current direction” used in extracting the voltage across Hall cross bar junction

 

Figure 1: Magnetic device with spin-orbit torque (SOT) driven logic.

Figure 1: Magnetic device with spin-orbit torque (SOT) driven logic.

 

Applications & Advantages  

The main application areas include embedded systems and IC circuitry featuring embedded magnetic RAM. This technology offers the following advantages:

  • Enhances system performance and reduces power consumption by minimising data transfer between memory and processor.  
  • Enables direct data sensing. 

Inventor

Prof LEW Wen Siang