Epitaxial Growth On Silicon Surface

Principal Investigator: A/P Liang Meng Heng

MBE is a powerful and flexible technique for growing crystals. However, there are still a number of aspects of the growth process that are poorly understood. There have been many experimental and theoretical attempts to address these questions but very little computer simulation of the MBE problem. Recent advances in computer technology, however, have opened up the possibility for realistic simulations of such processes. Our goals in simulating the MBE growth process are to understand the effects on the quality and morphology of the epilayers due to changes in various controllable parameters and uncontrollable aspects of the substrate. Examples of controllable parameters are beam intensity and the substrate temperature. Uncontrollable aspects include surface reconstruction, stress and strain on the overlayer structure and surface diffusion.

Effect of temperature on growth