Publications

Publication Co-authors

  1. Jianxun Sun, Yuan Bo Li, Yiyang Ye, Jun Zhang, Gang Yih Chong, Juan Boon Tan, Zhen Liu, Tupei Chen."3D Geometric Engineering of the Double Wedge-Like Electrodes for Filament-Type RRAM Device Performance Improvement." IEEE Access 8 (2020): 4924-4934.
  1. Goh, Simon Chun Kiat, Li Lynn Shiau, Mohamad Shamsul Bin Mohamad, Chengkuo Lee and Chuan Seng Tan. “Highly Compact Linear Variable Filter in the Mid Infrared Region for Acetone Level Monitoring.” IEEE Sensors Journal 20 (2019): 4171-4178.

Journals

  1. Whiteside M., Arulkumaran S. and Ng G. I., ‘Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate’, Mater. Sci. and Eng. B 270 (2021) p.115224. https://doi.org/10.1016/j.mseb.2021.115224 
  2. R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, A. Ranjan, Tian Long Alex Seah , “Source of two-dimensional electron gas in unintentionally doped AlGaN/GaN multichannel high-electron-mobility transistor heterostructures,” Appl. Phys. Lett. 118, 122105 (2021).
  3. A. Ranjan, R. Lingaparthi, N. Dharmarasu,  and K. Radhakrishnan, “Enhanced NO2 Gas Sensing Performance of Multigate Pt/AlGaN/GaN High Electron Mobility Transistors,” Journal of the Electrochemical Society, 168 (4), 047502 (2021).
  4. Sergio G.-S., Ignacio T. I., Susana P., Ranjan  K., Manvi A., Ravikiran L., Dharmarasu N.,  Radhakrishnan, K; Arulkumaran S., Ng G.I., Tomas G. and Javier M. ‘Non-linear thermal resistance model for the simulation of high power GaN-based devices’,  Semicon. Sci. and Technol. 29 Mar 2021. https://doi.org/10.1088/1361-6641/abeb83
  5. Fiedler H., Leveneur J., Mitchell D.R.G., Arulkumaran S., Ng G. I., Alphones A., and Kennedy J, ‘Enhancing the piezoelectric modulus of wurtzite AlN by ion beam strain engineering’, Appl. Phys. Lett., 118 (2021) 012108. https://doi.org/10.1063/5.0031047 
  6. Hao Zhou, Lin Zhang, Jinchao Tong, Shaoteng Wu, Bongkwon Son, Qimiao Chen, Dao Hua Zhang and Chuan Seng Tan. "Surface plasmon enhanced GeSn photodetectors operating at 2 µm." Optics Express, Vol. 29, No. 6 (2021): 8498-8509.
  7. Jinchao Tong, Fei Suo, Tianning Zhang, Zhiming Huang, Junhao Chu and Dao Hua Zhang. "Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection" Light: Science & Applications, Vol. 10, No. 58 (2021): 1-10.
  8. Landobasa Y. M. Tobing, Michał Wasiak, Dao Hua Zhang, Weijun Fan and Tomasz Czyszanowski.
    "Nearly total optical transmission of linearly polarized light through transparent electrode composed of GaSb monolithic high-contrast grating integrated with gold" Nanophotonics, Vol. 10, No. 15 (2021): 0286.
  9. Lin Liu, Landobasa Y. M. Tobing, Tingting Wu, Bo Qiang, Francisco J. Garcia-Vidal, Dao Hua Zhang, Qi Jie Wang and Yu Luo. "Plasmon-induced thermal tuning of few-exciton strong coupling in 2D atomic crystals" Optica, Vol. 8, No. 11 (2021): 1416-1423.
  10. Zhi-Jun Zhao, Sang-Ho Shin, Sang Yeon Lee, Bongkwon Son, Yikai Liao, Soonhyoung Hwang, Sohee Jeon, Hyeokjoong Kang, Munho Kim* and Jun-Ho Jeong, “Nanotransfer Printing with Wafer-Scale Uniformity and Controllability”, ACS Nano, 16 (1) (2022) p.378–385. https://doi.org/10.1021/acsnano.1c06781


  1. Hanlin Xie, Zhihong Liu, Wenrui Hu, Zheng Zhong, Kenneth Lee, Yong-Xin Guo and Geok Ing Ng, “GaN-on-Si HEMTs Fabricated with Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs”, IEEE Microwave and Wireless Components Letters, pp. 1-4, 17 Nov 2020 https://doi.org/10.1109/LMWC.2020.3036389
  2. Hanlin Xie, Zhihong Liu, Yu Gao, Kumud Ranjan, Kenneth E. Lee and Geok Ing Ng, "CMOS-compatible GaN-on-Si HEMTs with cut-off frequency of 210 GHz and record Johnson’s figure-of-merit of 8.8 THz·V," Applied Physics Express, Vol. 13, No. 2, pp. 026503-1-026503-4, Jan. 2020. https://doi.org/10.7567/1882-0786/ab659f 
  3. Whiteside M., Arulkumaran S., Dikme Y., Sandupatla A. and Ng G. I, ‘Demonstration of AlGaN/GaN MISHEMT on Si with Low-Temperature Epitaxy Grown AlN Dielectric Gate’, MDPI Electronics 9 (2020) 1858, pp.1-8. http://dx.doi.org/10.3390/electronics9111858 
  4. Whiteside M., Arulkumaran S., Dikme Y., Sandupatla A. and Ng G. I. ‘Improved interface state density by low temperature epitaxy grown AlN for AlGaN/GaN metal-insulator-semiconductor diodes’, Mater. Sci. and Eng. B 262 (2020) p.114707. https://doi.org/10.1016/j.mseb.2020.114707 
  5. Sandupatla A., Arulkumaran S., Ng G.I., Nitta S., John K., and Amano H., ‘Vertical GaN-on-GaN Schottky Diodes as α-particle Radiation Sensors’, MDPI Micromachines (Review), 11 (2020) 519, pp. 1-21. http://dx.doi.org/10.3390/mi11050519 
  6. Sandupatla A., Arulkumaran S., Ranjan K., Ng G.I., Deki M., Nitta S., Honda Y., and Amano H. ‘Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures’, Applied Physics Express, 13 (2020) 074001. https://doi.org/10.35848/1882-0786/ab93a0 
  7. Whiteside M.,  Arulkumaran S., Chng S. S., Maziar S., Teo H.T.E and Ng G. I. ‘On the recovery of 2DEG properties in vertically ordered h-BN deposited AlGaN/GaN heterostructures on Si substrate’, Applied Physics Express 13 (2020) 065508. https://doi.org/10.35848/1882-0786/ab92ee
  8. Ranjan K., Sandupatla A., Arulkumaran S. and Ng G.I. ‘Low Static and Dynamic On-Resistance with High Figure of Merit in AlGaN/GaN High Electron Mobility Transistors on Chemical Vapor Deposited Diamond’, Phys. Stat. Soli (a), 2020 (2020) 1900815, pp.1-4. https://doi.org/10.1002/pssa.201900815
  9. Sandupatla A., Arulkumaran S., Ranjan K., Ng G.I., Deki M., Nitta S., Honda Y., and Amano H. ‘Improved breakdown voltage in vertical GaN Schottky barrier diodes on free-standing GaN with Mg-compensated drift layer’, Japanese Journal of Applied Physics 59 (1), 010906 (2020). https://doi.org/10.7567/1347-4065/ab65cd 
  10. R. Lingaparthi, N. Dharmarasu, K. Radhakrishnan, and M. Agrawal “In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications”, Thin Solid Films 708, 138128 (2020).
  11. S Patwal, M Agrawal, K Radhakrishnan, T. L. A Seah, N Dharmarasu, “Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering” Physica status solidi (a) 217 (7), 1900818 (2020).
  12. A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu, “Effects of various functionalisation layers on ammonia gas sensing using AlGaN/GaN high electron mobility transistors”, International Journal of Nanotechnology 17 (1), 16-28 (2020)
  13. Hao Zhou, Shengqiang Xu, Shaoteng Wu, Yi-Chiau Huang, Peng Zhao, Jinchao Tong, Bongkwon Son, Xin Guo, Daohua Zhang, Xiao Gong and Chuan Seng Tan."Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate." Optics Express, Vol. 28, No. 23 (2020): 34772-34786.
  14. Hao Zhou, Shengqiang Xu, Yiding Lin, Yi-Chiau Huang, Bongkwon Son, Qimiao Chen, Xin Guo, Kwang Hong Lee, Simon Chun Kiat Goh, Xiao Gong and Chuan Seng Tan. "Photo deteHigh-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 μm." Optics Express, Vol. 28, No. 7 (2020): 10280-10293.

 

Conferences

  1. Hanlin Xie, Zhihong Liu, Yu Gao, Kenneth E. Lee and Geok Ing Ng, "100 nm T-Gate GaN-On-Si HEMTs Fabricated with CMOS-Compatible Metallization for Microwave and Mm-Wave Applications", 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Chengdu, China, 8-11 Apr 2021.
  2. R. Lingaparthi, N. Dharmarasu, and K. Radhakrishnan, Effects of high Si doping in GaN Epilayers grown by Plasma-assisted MBE, Compound Semiconductor Week (CSW), May 2021, online. 
  3. S. Patwa, N. Dharmarasu, M. Agrawal, Seah Tian Long Alex , K. Radhakrishnan, and Ravikiran Lingaparthi. “Stress engineering in two-step AlN buffer growth on SiC substrate using PA-MBE”, Compound Semiconductor Week (CSW), May 2021, online.
  4. Akhil Ranjan, S. Patwal, N. Dharmarasu, K. Radhakrishnan, and R. Lingaparthi,  “Enhanced NO2 gas sensing performance of Gas sensors using high 2DEG density GaN HEMT heterostructures”, Compound Semiconductor Week (CSW), May 2021, online. 
  1. Sandupatla A., Arulkumaran S.,  Ng G.I.,  Ranjan K.,  Deki M.,  Nitta S.,  Honda Y., and Amano H., “Change of conduction mechanism in vertical GaN-on-GaN Schottky diodes at elevated temperatures” Electron Devices Technology and Manufacturing (EDTM), 16-18 Mar 2020, Malaysia.
  2. Sandupatla A., Arulkumaran S.,  Ng G.I.,  Ranjan K.,  Murmu P., Kennedy J., Deki M.,  Nitta S.,  Honda Y., and Amano H., “Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high efficiency α-particle detection”, Electron Devices Technology and Manufacturing (EDTM), 16-18 Mar 2020, Malaysia.
  3. Ranjan K., Arulkumaran S., Ng G. I., and Sandupatla A., “Low interface trap density in AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors (MIS-HEMTs) on CVD-Diamond,” Electron Devices Technology and Manufacturing (EDTM), 16-18 Mar 2020, Malaysia