Zeiss Crossbeam 540

ZEISS Crossbeam 540

FACTS ABN B4

A focused ion beam (FIB) built on a FESEM platform for site-specific analysis, cross-sectioning, deposition and removal of materials and TEM lamella preparation.

It has become increasingly popular as a fabrication and characterisation tool across many research areas such as nanotechnology, materials science, microelectronics, biological and life sciences. 
FIB schematic

How Does It Work?

A beam of ions, typically Ga+, is used to bombard a target material. It causes local sputtering of atoms at the target’s surface and hence removes material in a controlled manner. 
 

Resolution : 0.9 nm @ 15kV (SEM) & 3 nm (FIB)

Accelerating Voltage: 0.1kV to 30 kV

FIB probe current: up to 40 nA

Attachments:   

  • In-lens Secondary electron detector & Backscattered (EsB) electron detector
  • Secondary Electron and Secondary Ion imaging detector (SESI)
  • Annular Scanning Transmission Electron Microscopy (STEM) detector 
  • Omniprobe manipulator
  • Pt & C gas injection systems
  • Energy Dispersive X-ray (EDS)

Samples for FIB operation should be restricted to dimensions of not larger than 10 mm x 10 mm x 5 mm (thickness). If not electrically conductive, they should be conductively coated to minimize sample drift during operation.

 

  • Cross-sectioning (cut flat section for looking into the material)
  • Rapid and site-specific TEM lamella preparation (cut a thin lamella at specific site for TEM)
  • Nanopatterning (i.e. deposition or milling of complex patterns/features)
  • Creating electronic circuit
  • 3D tomography (cut and view the external and internal structures of a specimen in 3D space)