Si and III-V Fabrication at Nanyang Nano Fabrication Centre (N2FC)

• Si fabrication: 150 mm and 200 mm wafers
• III-V fabrication: 100 mm wafers and small dies

Research and Technology Demonstrations

Enabled by combined Si and III-V fabrication capabilities:

• III-V quantum-cascade lasers, III-V multiple quantum well (MQW) devices, Heterojunction Bipolar Transistors, High Electron Mobility Transistors
• Heterogeneous integration of III-V materials with silicon photonics
• Metamaterials and topological materials

Heterogeneous Integration Approaches

• Monolithic integration of III-V materials on silicon
• Heterogeneous integration via flip-chip bonding
• Layer transfer and membrane technology
• Strain-engineering techniques
• Integration of emerging 2D materials, including hexagonal boron nitride (h-BN), and dichalcogenides (e.g. WSe₂, MoS₂)

Flip-Chip Bonding

Component Size

• Chip size (upper die): 0.2 x 0.2 mm – 50 x 50 mm
• Substrate size (lower die): 0.2 x 0.2 mm – 100 x 100 mm
• Total thickness: 0.03 – 10 mm

Bonding Arm

• Alignment accuracy: ±0.1 µm
• Post-bond accuracy: ±0.5 µm
• Force: 1 – 1000 N

Bonding Processes

• Flip-chip bonding, Die bonding, Pick-and-place, Thermocompression, Thermosonic, Reflow, UV curing, Adhesive bonding, Sintering

Materials

• Gold, Gold/Tin, Indium, Copper, Adhesives

Tunable Lasers

• Max threshold current (Ith): 30 mA
• Min power: 20 mW
• Max linewidth: 10 kHz
• Tuning range: 14 nm

*By end of FY2026

Frequency-Comb Lasers

• Max threshold current (Ith): 30 mA
• Min power: 20 mW
• Max linewidth: 10 kHz
• Tuning range: 14 nm
• Multiwavelength: Up to 2 µm

*By end of FY2027

Communication-Band III-V Uni-Traveling Carrier (UTC) Photodetectors

• Min InGaAs UTC bandwidth: 120 GHz
• Min InGaAs UTC responsivity: 0.6 A/W

*By end of FY2026

Integrated Photon-Pair Source

• Peak spectral signal of ~24,000 detector counts from a single output arm at 3 mW off-chip pump power
• Suitable for quantum communications and sensing

Superconducting Nanowire Single-Photon Detector (SNSPD)

• Material: NbTiN
• Can be fibre-coupled or waveguide-integrated
• On-chip efficiency: 80%
• Recovery time: 20 ns
• Wavelength range: 500 nm – 3.7 µm
• Optimised wavelength: 1.5 µm

Quantum Cascade Laser Source

• Single-mode and topological MWIR laser
• Power: 5 mW

Chip-to-Chip Bonding

• Ge/AlN on Sapphire or Si
• Current yield: 70% (chip-on-chip)

Demonstrated Devices

THz High-Bandwidth Wireless Data Communication

• Waveguide Bandwidth: TE – 280 GHz, TM – 220 GHz
• Averaged TE/TM Bending Losses
  1. 90°, 0.3561 dB/turn
  2. 180°, 0.3882 dB/turn
• Averaged Path Losses
  1. TE: 0.2190 dB/cm
  2. TM: 0.1921 dB/cm

THz Topological Waveguides

• Waveguide Bandwidth 30 – 70 GHz
• Propagation loss < 0.1 dB/cm
• 0 radius bends, bending loss < 0.1 dB

Topological Antenna, Gain > 14 dBi

• Leaky-wave Antenna (LWA)
• Beam Steering Antenna

THz Data Communication Platform (Wired/Wireless)

• Aggregated data rates ~ 1 Tbps (wired)
• 3 – 6 wireless links, 72 Gbps single-link data rate

Integrated Sensing Platforms for MWIR and THz

• MWIR band range: 3 – 14 µm on Si photonics platform
• THz spectroscopy between 0.1 – 1 THz on Si photonics platform

*By end of FY2031

Topological Electronic Materials

• Material synthesis: Molecular Beam Epitaxy
• Material characterisation: In-situ Angle-Resolved Photoemission Spectroscopy (ARPES) and Scattering-type Scanning Near-field Optical Microscopy (S-SNOM)

Polaritonic Waveguides in III-V Quantum Wells or Perovskite Films

• Propagation range: 100 – 300 µm
• π-phase shift: Within 10 µm
• Modulation efficiency (VπL): 2 V·cm

MEMS-Based Optical Switching

• Max switching speed: 600 ns

*By end of FY2026