NTU Home | EEE Home | Circuits&Systems Home | VIRTUS    

NTU Virtual Tour | NTU Map    

                    Low Power VLSI Design of Excellence
 

     HOME

     PEOPLE

     RESEARCH

     PUBLICATIONS

     TEACHING

     LINKS

 

 

 

Publications                Patents                Honors

      2012

        Conference

  • T. Kim, P. Lu, and C. Kim, "Design of Ring Oscillator Structures for Measuring Isolated NBTI and PBTI", IEEE International Symposium on Circuits and Systems (ISCAS), May 2012 [Accepted]

  • R. Vaddi, V. Pott, J. Lin, and T. Kim, "Design and Analysis of Anchorless Shuttle Nano-electro-mechanical Non-volatile Memory for High Temperature Applications", IEEE International Reliability Physics Symposium (IRPS), Apr.. 2012 [Paper][Slide]

  • R. Vaddi, V. Pott, J. Lin, and T. Kim, "Design, Modeling and Simulation of an Anchorless Nano-Electro-Mechanical Nonvolatile Memory for High Temperature Applications", International Conference on Solid-State and Integrated Circuit (ICSIC), pp. 12-17, Mar. 2012

  • A. Linn, E. Lim, T. Yoshikawa, and T. Kim, "Design of Capacitive-Coupling-Based Simultaneously Bi-directional Transceivers for 3DIC", IEEE International 3D System Integration Conference (3DIC), pp. 1-4, Feb. 2012 [Paper]

        Journal

  • [Invited] T. Kim and Z. Kong, "Impact Analysis of NBTI/PBTI on SRAM VMIN and Design Techniques for Improved SRAM VMIN ", Journal of Semiconductor Technology and Science (JSTS), 2011 [Submitted]

  • R. Vaddi, V. Pott, G. Chua, J. Lin, and T. Kim, "Design and Scalability of a Memory Array Utilizing Anchor-free Nano-electro-mechanical Non-volatile Memory Device", IEEE Electron Device Letters, 2012 [Submitted]

  • V. Pott, R. Vaddi, G. Chua, J. Lin, and T. Kim, "Design optimization of a pulsed-mode electromechanical non-volatile memory", IEEE Electron Device Letters, 2012 [in revision]

  • A. Linn, E. Lim, T. Yoshikawa, and T. Kim, "Design of Simultaneous Bi-directional Transceivers Utilizing Capacitive Coupling for 3DICs", IEEE Journal on Emerging and Selected Topics in Circuits and Systems (JETCAS), 2012        [in press]

  • V. Pott, G. Chua, R. Vaddi, J. Lin, and T. Kim, "The shuttle nano-electro-mechanical non-volatile memory", IEEE Transactions on Electron Devices, Vol. 59, pp. 1137-1143, Apr. 2012 [Paper]

  • T. Kim, W. Zhang,  and C. Kim, "An SRAM Reliability Test Macro for Fully-Automated Statistical Measurement of VMIN Degradation", IEEE Transactions on Circuits and Systems-I, Vol. 59, pp. 584-593, Mar. 2012 [Paper]

 

      2011

        Conference

  • R. Vaddi and T. Kim, "Ultra-low Power High Efficient Rectifiers with 3T/4T Double-gate MOSFETs for RFID Applications", IEEE International Symposium on Integrated Circuits (ISIC), pp. 611-614, Dec. 2011

  • [IEEE SSCS Seoul Chapter Award][Invited to JSTS] T. Kim and Z. Kong, "Impacts of NBTI/PBTI on SRAM VMIN and Design Techniques for SRAM VMIN Improvement", IEEE International SoC Design Conference (ISOCC), pp. 163-166, Nov. 2011 [Paper]

  • Q. Li and T. Kim, "Analysis of SRAM Hierarchical Bitlines for Optimal Performance and Variation Tolerance", IEEE International SoC Design Conference (ISOCC), pp. 412-415, Nov. 2011

  • J. Kim, B. Linder, R. Rao, T. Kim, P. Lu, K. Jenkins, C. Kim, A. Bansal, S. Mukhopadhyay, and C. Chuang, “Reliability Monitoring Ring Oscillator Structures for Isolated/Combined NBTI and PBTI Measurement in High-K Metal Gate Technologies”, IEEE International Reliability Physics Symposium (IRPS), pp. 47-50, Apr. 2011 [Paper]

        Journal

  • R. Vaddi, R. P. Agarwal, S. Dasgupta, and T. Kim, "Design and Analysis of Double-gate MOSFETs for Ultra-low Power Radio Frequency Identification (RFID): Device and Circuit Co-design", Journal of Low Power Electronics and Applications, pp. 277-302, July 2011 [Paper]

 

      2010

        Conference

  • Q. Li and T. Kim, “A 9T Subthreshold SRAM Bitcell with Data-independent Bitline Leakage for Improved Bitline Swing and Variation Tolerance”, IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), pp. 260-263, Dec. 2010    [Paper] [Slide]

        Journal

  • [Invited] J. Keane, T. Kim, X. Wang,  and C. Kim, "On-Chip Reliability Monitors for Measuring Circuit Degradation", Microelectronics Reliability Journal, Vol. 50, pp. 1039-1053, Aug. 2010 [Paper]

  • J. Keane, T. Kim, and C. Kim, “An On-Chip NBTI Sensor for Measuring pMOS Threshold Voltage Degradation”, IEEE Trans. on VLSI Systems, Vol. 18, No. 6, pp. 947-956, June 2010 [Paper]

 

      2006 ~ 2009

        Conference

  • Tae-Hyoung Kim, Wei Zhang, and Chris Kim, “An SRAM Reliability Test Macro for Fully-Automated Statistical Measurements of Vmin Degradation”, IEEE Custom Integrated Circuit Conference (CICC), pp. 231-234, Sep. 2009 [Paper] [Slide]

  •  John Keane, Tae-Hyoung Kim, and Chris Kim, ”Silicon Odometers: On-Chip Test Structures for Monitoring Reliability Mechanisms and Sources of Variation”, Workshop on Test Structure Design for Variability Characterization in Conjunction with IEEE International Conference on Computer-Aided Design (ICCAD), Nov. 2008 [Paper]

  • [AMD/CICC Student Scholarship Award] Tae-Hyoung Kim, Jason Liu, and Chris Kim, “A Voltage Scalable 0.26V, 64kb 8T SRAM with Vmin Lowering Techniques and Deep Sleep Mode”, IEEE Custom Integrated Circuit Conference (CICC), pp. 407-410, Sep. 2008 [Paper] [Slide]

  • Pulkit Jain, Tae-Hyoung Kim, John Keane, and Chris Kim, “A Multi-Story Power Delivery Technique for 3D Integrated Circuits”, IEEE International Symposium on Low Power Electronics and Design (ISLPED), pp. 57-62, Aug., 2008 [Paper] [Slide]

  • [Invited] Tae-Hyoung Kim, Jason Liu, John Keane, and Chris Kim, “Circuit Techniques for Ultra-Low Power Sub-threshold SRAMs”, IEEE International Symposium on Circuits and Systems (ISCAS), pp. 2574-2577, May 2008 [Paper]

  • Tae-Hyoung Kim, Jason Liu, and Chris Kim, “An 8T Subthreshold SRAM Cell Utilizing Reverse Short Channel Effect for Write Margin and Read Performance Improvement”, IEEE Custom Integrated Circuits Conference (CICC), pp. 241-244, Sep. 2007 [Paper] [Slide]

  • John Keane, Tae-Hyoung Kim, and Chris Kim, “An On-Chip NBTI Sensor for Measuring PMOS Threshold Voltage Degradation”, IEEE International Symposium on Low Power Electronics and Design (ISLPED), pp. 189-194, Aug. 2007 [Paper] [Slide]

  • [DAC/ISSCC Design Contest Winner][Invited to JSSC] Tae-Hyoung Kim, Randy Persaud, and Chris Kim, “Silicon Odometer: An On-Chip Reliability Monitor for Measuring Frequency Degradation of Digital Circuits”, IEEE Symposium on VLSI Circuits (SOVC), pp. 122-123, June 2007 [Paper] [Slide]

  • Tae-Hyoung Kim, Jason Liu, John Keane, and Chris Kim, “A High-Density Subthreshold SRAM with Data-Independent Bitline Leakage and Virtual-Ground Replica Scheme”, IEEE International Solid State Circuit Conference (ISSCC), pp. 330-606, Feb. 2007 [Paper] [Slide]

  • Tae-Hyoung Kim, Hanyong Eom, John Keane, and Chris Kim, “Utilizing Reverse Short Channel Effect for Optimal Subthreshold Circuit Design", IEEE International Symposium on Low Power Electronics and Design (ISLPED), pp. 127-130, Oct. 2006 [Paper] [Slide]

  • John Keane, Hanyong Eom, Tae-Hyoung Kim, Sachin Sapatnekar, and Chris Kim, “Subthreshold Logical Effort: A Systematic Framework for Optimal Subthreshold Device Sizing”, IEEE Design Automation Conference (DAC), pp. 425-428, July, 2006 [Paper] [Slide]

        Journal

  • Tae-Hyoung Kim, Jason Liu, and Chris H. Kim, “A Voltage Scalable 0.26V, 64kb 8T SRAM with Vmin Lowering Techniques and Deep Sleep Mode”, IEEE Journal of Solid State Circuits, Vol. 44, No. 6, pp. 1785-1795, June 2009 [Paper]

  • John Keane, Hanyong Eom, Tae-Hyoung Kim, Sachin Sapatnekar, and Chris Kim, “Stack Sizing for Optimal Current Drivability in Subthreshold Circuits”, IEEE Trans. on VLSI Systems, Vol. 16, No. 5, pp. 598-602, May 2008 [Paper]

  • [Invited] Tae-Hyoung Kim, Randy Persaud, and Chris Kim, “Silicon Odometer: An On-Chip Reliability Monitor for Measuring Frequency Degradation of Digital Circuits”, IEEE Journal of Solid State Circuits, Vol. 43, No. 4, pp. 874-880, Apr. 2008 [Paper]

  • Tae-Hyoung Kim, Jason Liu, John Keane, and Chris Kim, “A 0.2V, 480kb Subthreshold SRAM with 1k Cells per Bitline for Ultra-Low Voltage Computing”, IEEE Journal of Solid State Circuits, Vol. 43, No. 2, pp. 518-529, Feb. 2008 [Paper]

  • Tae-Hyoung Kim, John Keane, Hanyong Eom, and Chris Kim, “Utilizing Reverse Short Channel Effect for Optimal Subthreshold Circuit Design”, IEEE Trans. on VLSI Systems, Vol. 15, No. 7, pp. 821-829, July, 2007 [Paper]

 

      2000 ~ 2005

        Conference

  • Tae-Hyoung Kim, Uk-Rae Cho, and Hyun-Geun Byun, “A 1.2V Multi Gb/s/pin Memory Interface Circuits with High Linearity and Low Mismatch”, IEEE International Symposium on Circuit and System (ISCAS), pp.1847-1850, May, 2005 [Paper]

  • [Invited to IEICE] Tae-Hyoung Kim, Uk-Rae Cho, and Hyun-Geun Byun, “A High Resolution, Wide Range Digital Impedance Controller for High-Speed SRAM Interface”, IEEE Asia-Pacific Conference on Advanced System IC (AP-ASIC), pp. 120-123, Aug., 2004 [Paper]

  • [Invited to JSSC] Uk-Rae Cho, Tae-Hyoung Kim, Yong-Jin Yoon, et al., “A 1.2V 1.5Gbps 72M DDR3 SRAM”, IEEE International Solid State Circuit Conference (ISSCC), pp. 300-494, Feb., 2003 [Paper]

  • Tae-Hyoung Kim, Woong Joo, Jun-Jey Sung, Seung-Bin You, and Suki Kim, “An 8-Bit 40MSamples/s Low Power Folding & Interpolating ADC”, IEEK Korea Conference on Semiconductor (KCS), Feb. 2001 [Paper]

  • Tae-Hyoung Kim, Jun-Jey Sung, Soo-Hwan Kim, Woong Joo, Seung-Bin You, and Suki Kim, “A 10-bit 40Msamples/s Cascading Folding & Interpolating A/D Converter with Wide Range Error Correction”, IEEE Asia-Pacific Conference on Advanced System IC (AP-ASIC), pp. 57-60, Aug., 2000 [Paper]

  • Tae-Hyoung Kim, Jun-Jey Sung, Soo-Hwan Kim, Shin-Il Lim, and Suki Kim, “A 10-Bit, 40MSamples/s, Fully Nyquist Rate and Folding & Interpolating ADC with a Cascading Architecture”, IEEK Korea Conference on Semiconductor (KCS), Jan., 2000 [Paper]

        Journal

  • [Invited] Tae-Hyoung Kim, Kwang-Jin Lee, Uk-Rae Cho, and Hyun-Geun Byun, “A High Resolution, Wide Range Digital Impedance Controller”, IEICE Trans. on Electronics, Vol. E88-C, pp. 1723-1725, Aug. 2005 [Paper]

  • [ETRI Journal Paper of the Year] Kwang-Jin Lee, Tae-Hyoung Kim, Uk-Rae Cho, Hyun-Geun Byun, and Suki Kim, “Voltage-mode 1.5Gbps Interface Circuits for Chip-to-Chip Communication”, ETRI Journal, Vol. 27, Number 1, pp. 81-88, Feb., 2005 [Paper]

  • [Invited] Uk-Rae Cho, Tae-Hyoung Kim, Yong-Jin Yoon, et al., “A 1.2V 1.5Gbps 72M DDR3 SRAM”, IEEE Journal of Solid State Circuits, Vol. 38, pp. 1943-1951, Nov., 2003 [Paper]

  • Mingi Kim, Tae-Hyoung Kim, Woong Joo, et al., “Low Power, 8-bit 40Msamples/s A/D Converter with a Wide Range Error Correction Scheme”, Journal of Korea Physics Society, Vol. 40, No. 1, pp. 11-16, Jan., 2002 [Paper]

  • Tae-Hyoung Kim, Jun-Jey Sung, Soo-Hwan Kim, Shin-Il Lim, and Suki Kim, “A 10-bit, 40-MSamples/s, Folding & Interpolating ADC with Wide Range Error Correction”, Journal of the Research Institute of ASIC Design, Aug. 2000 [Paper]

 

 

 © 2009 Tony Kim's Research Group            S2.2-B2-52 School of EEE, Nanyang Technological University, Singapore