
International
Journal/Conference
Local
Journal/Conference
Presentations
(EDS Distinguished Lectures)
Articles
Thesis
Citations
Referred Journal Publications

G. Hu, S. Hu, R. Liu, L. Wang, X. Zhou, and T.A.
Tang, "QuasiBallistic Transport Model for Graphene FieldEffect Transistor,"
IEEE Trans. Electron Devices,
Vol. 60, No. 7, pp.
24102414, Jul. 2013.

S. B. Chiah, X. Zhou, and L. Yuan, "Compact ZeroTemperature
Coefficient Modeling Approach for MOSFETs Based on Unified Regional Modeling
of Surface Potential," IEEE Trans. Electron
Devices, Vol. 60, No. 7, pp.
21642170, Jul. 2013.

T. T. Le, H. Y. Yu, Y. Sun, N. Singh, X. Zhou, N. Shen, G. Q. Lo, and D.
L. Kwong, "High Performance PolySi Vertical Nanowire Thin Film Transistor
and the Inverter Demonstration," IEEE Electron
Device Lett., Vol. 32, No. 6, pp. 770772, Jun. 2011.

X. Zhou, G. Zhu, G. H. See, K. Chandrasekaran, S. B. Chiah, and K. Y. Lim,
"Unification of MOS compact
models with the unified regional modeling approach,"
(Invited Paper), Journal
of Computational Electronics, Vol.
10, No. 1, pp. 121135, 2011.

C. Q. Wei, Y.Z. Xiong, X. Zhou, N. Singh, X.J.
Yuan, G. Q. Lo, L. Chan, and D.L. Kwong, "Comparative Study of 1/f Noise
Degradation Caused by Fowler–Nordheim Tunneling Stress in Silicon Nanowire
Transistors and FinFETs," IEEE Trans. Electron
Devices, Vol. 57, No. 10, pp.
27742779, October 2010.

W. Chandra, L. K. Ang, and X. Zhou, “Shot noise reduction
of space charge limited electron injection through a Schottky contact,”
Phys.
Rev. B, Vol. 81, No. 12, 125321,
2010.

C. Q. Wei, Y.Z. Xiong, and X. Zhou, "Test Structure
for Characterization of LowFrequency Noise in CMOS Technologies," IEEE
Trans. Instr. Meas., Vol. 57, No. 7, pp.
18601865, July 2010.

G. J. Zhu, X. Zhou, Y. K. Chin, K. L. Pey, J. B.
Zhang, G. H. See, S. H. Lin, Y. F. Yan, and Z. H. Chen, "Subcircuit Compact
Model for DopantSegregated Schottky GateAllAround SiNanowire MOSFETs,"
IEEE
Trans. Electron Devices,
Vol.
57, No. 4, pp.
772781, Apr. 2010.

Z. H. Chen, X. Zhou, and G. J. Zhu, “Effects of Translational
Layer of Gate Insulator on Recombination DC CurrentVoltage Lineshape in
MetalOxideSilicon Transistors,” Jpn.
J. Appl. Phys., Vol. 48, No. 9, 091403,
2009.

C. Q. Wei, Y.Z. Xiong, X. Zhou, "Investigation of
LowFrequency Noise in NChannel FinFETs From Weak to Strong Inversion,"
IEEE
Trans. Electron Devices, Vol. 56, No.
11, pp. 28002810, Nov. 2009.

C. Q. Wei, Y. Jiang, Y.Z. Xiong, X. Zhou, N. Singh,
S. C. Rustagi, G. Q. Lo, and D.L. Kwong, "Impact of Gate Electrode on
1/f Noise of GateAllAround Silicon Nanowire Transistors," IEEE
Electron Device Lett., Vol. 30, No. 10,
pp. 10811083, Oct. 2009.

C. Q. Wei, Y.Z. Xiong, X. Zhou, N. Singh, S. C.
Rustagi, G. Q. Lo, and D.L. Kwong, "Investigation of LowFrequency Noise
in Silicon Nanowire MOSFETs in the Subthreshold Region," IEEE
Electron Device Lett., Vol. 30, No. 6,
pp. 668671, June 2009.

X.F. Wang, L.N. Zhao, Z.H. Yao, Z.F. Hou, M.
Yee, X. Zhou, S.H. Lin, and T.S. Lee, "Atomistic Simulation of Gate Effect
on Nanoscale Intrinsic Si FieldEffect Transistors," Int.
J. Nanosci., Vol. 8, No. 1 & 2, pp.
113117, 2009.

G. J. Zhu, X. Zhou, T. S. Lee, L. K. Ang, G. H. See,
S. H. Lin, Y. K. Chin, and K. L. Pey, "A
Compact Model for Undoped SiliconNanowire MOSFETs with SchottkyBarrier
Source/Drain," IEEE Trans. Electron
Devices, Vol.
56, No. 5, pp.
11001109, May 2009.

L.N. Zhao, X.F. Wang, Z.H. Yao, Z.F. Hou, M.
Yee, X. Zhou, S.H. Lin, and T.S. Lee, "Atomistic
modeling of the electrostatic and transport properties of a simplified
nanoscale field effect transistor,"
J.
Comput. Electron., Vol.
7, No. 4, pp.
500508, Dec. 2008.

G. J. Zhu, G. H. See, S. H. Lin, and X. Zhou, "“GroundReferenced”
Model for ThreeTerminal Symmetric DoubleGate MOSFETs with Source/Drain
Symmetry," IEEE Trans. Electron Devices,
Vol.
55, No. 9, pp.
25262530, Sep. 2008.

C. Q. Wei, G. H. See, X. Zhou, and L. Chan, "A
New ImpactIonization Current Model Applicable to Both Bulk and SOI MOSFETs
by Considering SelfLatticeHeating," IEEE
Trans. Electron Devices, Vol.
55, No. 9, pp.
23782385, Sep. 2008.

G. H. See, X. Zhou, K. Chandrasekaran, S. B. Chiah,
Z. M. Zhu, C. Q. Wei, S. H. Lin, G. J. Zhu, and G. H. Lim, "A
Compact Model Satisfying Gummel Symmetry in Higher Order Derivatives and
Applicable to Asymmetric MOSFETs," IEEE
Trans. Electron Devices, Vol.
55, No. 2, pp.
624631, Feb. 2008.

X. Zhou, Z. M. Zhu, S. C. Rustagi, G. H. See, G.
J. Zhu, S. H. Lin, C. Q. Wei, and G. H. Lim, "Rigorous
SurfacePotential Solution for Undoped Symmetric DoubleGate MOSFETs Considering
Both Electrons and Holes at Quasi Nonequilibrium," IEEE
Trans. Electron Devices, Vol.
55, No. 2, pp.
616623, Feb. 2008.

Z. Zhu, X. Zhou, S. C. Rustagi, G. H. See, S. Lin,
G. Zhu, C. Wei, and J. Zhang, "Analytic and explicit current model of undoped
doublegate MOSFETs," Electron. Lett.,
Vol. 43, No. 25, pp. 14641466, Dec. 2007.

Z. M. Zhu, X. Zhou, K. Chandrasekaran, S. C. Rustagi,
and G. H. See, "Explicit compact
surfacepotential and draincurrent models for generic asymmetric doublegate
MOSFETs," Jpn. J. Appl. Phys.,
Vol.
46, No. 4B,
pp. 20672072,
Apr. 2007.

W. Z. Shangguan, T. C. Au Yeung, Z. M. Zhu, and X. Zhou,
"General analytical Poisson solution
for undoped generic twogated metaloxidesemiconductor fieldeffect transistors,"
Appl.
Phys. Lett.,
Vol.
90, No. 1, 012110,
Jan. 2007.

W. Z. Shangguan, X. Zhou, K. Chandrasekaran, Z. M.
Zhu, S. C. Rustagi, S. B. Chiah, and G. H. See, "Surfacepotential
Solution for Generic Undoped MOSFETs with Two Gates," IEEE
Trans. Electron Devices, Vol.
54, No. 1, pp.
169172, Jan. 2007.

K. Chandrasekaran, X. Zhou, S. B. Chiah, G. H. See,
and S. C. Rustagi, "Implicit Analytical
Surface/Interface Potential Solutions for Modeling StrainedSi MOSFETs,"
IEEE
Trans. Electron Devices,
Vol.
53, No. 12, pp.
31103117, Dec. 2006.

W. Z. Shangguan, M. Saeys, and X. Zhou, "Surfacepotential
solutions to the PaoSah voltage equation," SolidState
Electron., Vol. 50, No. 78, pp. 13201329,
Jul.Aug. 2006.

K. Chandrasekaran, X. Zhou, S. B. Chiah, W. Z. Shangguan,
and G. H. See, L. K. Bera, N. Balasubramanian, and S. C. Rustagi, "Effect
of Substrate Doping on the Capacitance–Voltage Characteristics of Strainedsilicon
pMOSFETs," IEEE Electron Device Lett.,
Vol. 27, No. 1, pp. 6264, Jan. 2006.

K. Chandrasekaran, X. Zhou, S. B. Chiah, W. Z. Shangguan,
and G. H. See, "Physicsbased Singlepiece
Charge Model for StrainedSi MOSFETs," IEEE
Trans. Electron Devices, Vol. 52, No.
7, pp.
15551562, Jul. 2005.

W. Z. Shangguan, X. Zhou, S. B. Chiah, G. H. See,
and K. Chandrasekaran, "Compact
gatecurrent model based on transfermatrix method," J.
Appl. Phys., Vol. 97, 123709, Jun. 2005.

S. B. Chiah, X. Zhou, K. Chandrasekaran, W. Z. Shangguan,
G. H. See, and S. M. Pandey, "Singlepiece
polycrystalline silicon accumulation/depletion/inversion model with implicit/explicit
surfacepotential solutions," Appl.
Phys. Lett., Vol.
86, No. 20, 202111,
May 2005.

X. Zhou, S. B. Chiah, and K. Y. Lim, "A
compact deepsubmicron MOSFET g_{ds} model including hotelectron
and thermoelectric effects," SolidState
Electron., Vol.
48, No. 12, pp.
21252131, Dec. 2004.

S. B. Chiah, X. Zhou, K. Y. Lim, L. Chan, and S.
Chu, "SourceDrain Symmetry in
Unified Regional MOSFET Model," IEEE
Electron Device Lett., Vol. 25, No. 5,
pp. 311313, May 2004.

X. Zhou, "The
Missing Link to Seamless Simulation," (Invited Feature Article),
IEEE
Circuits Devices Mag., Vol.
19, No. 3, pp.
917, May 2003.

K. Y. Lim and X. Zhou, "An
analytical effective channellength modulation model for velocity overshoot
in submicron MOSFETs based on energybalance formulation," Microelectronics
Reliability, Vol.
42, No. 12, pp. 18571864, Dec. 2002.

X. Zhou and K. Y. Lim, "Deembedding
LengthDependent EdgeLeakage Current in Shallow Trench Isolation Submicron
MOSFETs," SolidState Electron.,
Vol.
46, No. 5, pp.
769772, May 2002.

K. Y. Lim and X. Zhou, "MOSFET
Subthreshold Compact Modeling with Effective Gate Overdrive," IEEE
Trans. Electron Devices, Vol.
49, No. 1, pp.
196199, Jan. 2002.

X. Zhou and K. Y. Lim, "Unified
MOSFET Compact IV Model Formulation through PhysicsBased
Effective Transformation," IEEE Trans.
Electron Devices, Vol.
48, No. 5, pp.
887896, May 2001.

X. Zhou, K. Y. Lim, and W. Qian, "Threshold
Voltage Definition and Extraction for DeepSubmicron MOSFETs," SolidState
Electron., Vol.
45, No. 3, pp.
507510, Apr. 2001.

K. Y. Lim and X. Zhou, "A PhysicallyBased
SemiEmpirical Effective Mobility Model for MOSFET Compact IV
Modeling," SolidState Electron.,
Vol.
45, No. 1, pp.
193197, Jan. 2001.

K. Y. Lim and X. Zhou, "A PhysicallyBased
SemiEmpirical Series Resistance Model for DeepSubmicron MOSFET IV
Modeling,"
IEEE Trans. Electron Devices,
Vol.
47, No. 6, pp.
13001302, Jun. 2000.

X. Zhou, "Exploring the Novel Characteristics
of HeteroMaterial Gate FieldEffect Transistors (HMGFET's) with GateMaterial
Engineering," IEEE Trans. Electron Devices,
Vol.
47, No. 1, pp.
113120, Jan. 2000.

X. Zhou, K. Y. Lim, and D. Lim, "A
General Approach to Compact Threshold Voltage Formulation Based on 2D
Numerical Simulation and Experimental Correlation for DeepSubmicron ULSI
Technology Development," IEEE Trans. Electron
Devices,
Vol.
47, No. 1, pp.
214221, Jan. 2000.

X. Zhou, K. Y. Lim, and D. Lim, "A
New 'CriticalCurrent at LinearThreshold' Method for Direct Extraction
of DeepSubmicron MOSFET Effective Channel Length," IEEE
Trans. Electron Devices, Vol.
46, No. 7, pp.
14921494, Jul. 1999.

X. Zhou, K. Y. Lim, and D. Lim, "A
Simple and Unambiguous Definition of Threshold Voltage and Its Implications
in DeepSubmicron MOS Device Modeling," IEEE
Trans. Electron Devices, Vol.
46, No. 4, pp.
807809, Apr. 1999.

X. Zhou and W. Long, "A Novel HeteroMaterial
Gate (HMG) MOSFET for DeepSubmicron ULSI Technology," IEEE
Trans. Electron Devices, Vol.
45, No. 12, pp.
25462548, Dec. 1998.

X. Zhou, T. Tang, L. S. Seah, C. J. Yap, and S. C. Choo, "Numerical
Investigation of Subpicosecond Electrical Pulse Generation by Edge Illumination
of Silicon TransmissionLine Gaps," IEEE J.
Quantum Electron., Vol.
34, No. 1, pp.
171178, Jan. 1998.

X. Zhou, "Numerical Physics of
Subpicosecond Electrical Pulse Generation by Nonuniform Gap Illumination,"
IEEE
J. Quantum Electron., Vol.
32, No. 9, pp.
16721679, Sep. 1996.

X. Zhou, "On the Physics of Femtosecond
Electrical Pulse Generation by Nonuniform Gap Illumination," OPTOELECTRONICSDevices
and Technologies, Vol. 10, No. 4, pp. 491504, Dec. 1995.

X. Zhou and H. S. Tan, "Monte Carlo
Formulation of FieldDependent Mobility for Al_{x}Ga_{1x}As,"
SolidState
Electron., Vol.
38, No. 6, pp.
12641266, Jun.
1995.

X. Zhou, S. Alexandrou, and T. Y. Hsiang, "Monte
Carlo investigation of the intrinsic mechanism of subpicosecond pulse generation
by nonuniform gap illumination," J. Appl.
Phys.,
Vol.
77, No. 2, pp. 706711, Jan. 1995.

X. Zhou, "Electron Transport in
GradedBand Devices: Interplay of Field, Composition and Length Dependencies,"
SolidState
Electron., Vol.
37, No. 11, pp. 18881890, Nov. 1994.

X. Zhou and H. S. Tan, "Monte Carlo
formulation of velocityfield characteristics and expressions for Al_{x}Ga_{1x}As,"
Int.
J. Electron., Vol. 76, No. 6, pp. 10491062, Jun. 1994.

X. Zhou, "Regional Monte Carlo Modeling
of Electron Transport and TransitTime Estimation in GradedBase HBT's,"
IEEE
Trans. Electron Devices, Vol.
41, No. 4, pp.
484490, Apr. 1994.

X. Zhou and T. Y. Hsiang, "Monte
Carlo determination of femtosecond dynamics of hotcarrier relaxation and
scattering processes in bulk GaAs," J. Appl.
Phys.,
Vol.
67, No. 12, pp. 73997403, Jun. 1990.

X. Zhou, T. Y. Hsiang, and R. J. Dwayne Miller, "Monte
Carlo study of photogenerated carrier transport in GaAs surface spacecharge
fields," J. Appl. Phys., Vol.
66, No. 7, pp. 30663073, Oct. 1989.
