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Welcome to the Workshop on Compact Modeling Website

WCM Overview

Overview | Objective | Scope | Topics | History | Milestones

Overview Compact Models (CMs) for circuit simulation have been at the heart of CAD tools for circuit design over the past decades, and are playing an ever increasingly important role in the nanometer system-on-chip (SOC) era.  Although not highly "visible" to circuit designers and technology developers, a compact model plays the key role in accuracy and efficiency of the circuit simulator being used by designers as well as a bridge to the technology in which the design is to be fabricated.  Like the role CM is played in circuit simulation, CM developers play the similar role in bridging the circuit designers and technology developers.  As the mainstream MOS technology is scaled into the nanometer regime, development of a truly physical and predictive compact model for circuit simulation that covers geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes a major challenge.  This demands that CM developers work more closely with the technology people and the design community.
Objective Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together.  The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors.  The creation of WCM is a natural response of the CM community to the increasing demand in the field, and it will position itself as a premier forum for CM developers in information exchange and promotion of modeling diversity.  Ultimately, the result of such a forum will benefit not only the model developers, but also as a service to the entire technology, modeling, and design communities.
Scope The scope of WCM covers compact models for circuit simulation, which is centered at the mainstream MOS intrinsic models and extended to SOI, multigate, nanowire, bipolar, RF, noise, interconnect, extrinsic, statistical, numerical-based, and reliability models, as well as parameter extraction and model-interface standardization.  The key application is for circuit simulation and, hence, numerical simulation and pure theoretical and experimental work will not be within the scope of WCM.
Topics The topics for WCM are largely categorized into the following areas:
  • Intrinsic Models
    • Bulk MOSFET
    • SOI MOSFET (partial-/full-depletion)
    • Multiple-Gate FET (DG/TG/GAA)
    • High-Voltage/LDMOS
    • Thin-Film Transistor (TFT)
    • Schottky-Barrier/Tunneling/Junctionless FET (SB-FET/JLFET/TFET)
    • Bipolar/Junction (BJT/HBT/SiGe/JFET)
    • HEMT (GaN/InGaP/InGaAs)
    • Non-quasi-static
    • RF
  • Extrinsic/Interconnect Models
    • Parasitic elements
    • Passive device
    • Diode
    • Resistor
    • ESD
    • Interconnect
  • Atomic/Quantum Models
    • Ballistic device
    • Carbon-Nanotube/Graphene FET (CNFET/GFET)
    • Organic FET
  • Statistical Variability/Reliability/Noise Models
    • Statistical variability
    • Reliability/hot carrier
    • Mismatch
    • Noise
  • Multi-Level Models
    • Subcircuit model
    • Gate/block model
    • Behavioral model
    • Numerical/TCAD/table-based
  • Model Extraction and Interface
    • Parameter extraction and optimization
    • Model-simulator interface
    • Model standardization
    • Model development platform
    • Verilog-A
History Workshop on Compact Modeling has been associated with the International Conference on Modeling and Simulation of Microsystems (MSM) and Nanotech Conference and Tradeshow (Nanotech) since 2002.  Before the initiation of the first WCM at MSM-2002, special sessions on Compact Modeling had been organized at MSM-2000 in San Diego and MSM-2001 in Hilton Head Island.

"The Nanotech conference has evolved along with the rapid changing fields of small technology over the last seven years.  The event originated through the creation of the International Conference on Modeling and Simulation of Microsystems.  This event provided a multidisciplinary forum designed to integrate distinct disciplines through a computational commonality.  Building upon this computational strength, the Workshop on Compact Modeling was created to provide a specific forum for the microelectronic design community.  A natural blending between microsystems, fluidics, mechanics and electronics continued to occurred at the design level.  The following years saw a dramatic climb in atomistic and molecular scale participation, blending with the established microsystem community at the event leading to the creation of the International Conference on Computational Nanoscience.  These three events were combined in 2001-2002 as the necessity for interdisciplinary cooperation between nano, bio and micro communities became more evident and accepted."

-- Quoted from Message from the Program Committee
Technical Program Co-chairs, Nanotech 2003
  • History of Nanotech - 10 years of growth... click here
  • Since the 7th Workshop in 2008, WCM has been running "on its own" as an established forum under NSTI Nanotech, with fully contributed papers.  It has served its historical role and continues to be an open forum for the compact modeling community.  After the 11th WCM in 2012, it becomes a biennial event under NSTI Nanotech conference.
    1st WCM WCM 2002, April 23-25, 2002, San Juan, Puerto Rico, USA
    1st panel WCM2002 Panel discussion on Trends and Needs in Compact Models in the SOC Era
    1st forum WCM2003 Forum on Model development - industry requirement dialogue
    1st poster WCM2003 contributed Poster session with oral briefing
    1st keynote WCM2005 keynote by C.-T. Sah: A History of MOS Transistor Compact Modeling
    1st joint paper WCM2005 joint-authored paper by J. Watts, C. McAndrew, C. Enz, C. Galup-Montoro, G. Gildenblat, C. Hu, R. van Langevelde, M. Miura-Mattausch, R. Rios, and C.-T. Sah: Advanced Compact Models for MOSFETs, edited by J. Watts, presented by C. McAndrew
    1st archive WCM 2003~2005 proceedings
    1st batch NSTI fellow X. Zhou, 2006 NSTI Fellow award receipient
    1st late news
    WCM2007 Late News by C.-T. Sah: Double-Gate Thin-Base MOS Transistor: The Correct Theory
    1st special Nanotech SpecialOverview by A. N. Saxena: Monolithic Concept and the Inventions of Integrated Circuits by Kilby and Noyce
    1st 10th anniversary WCM2011 - 10th anniversary on June 15-16, 2011 in Boston, USA
    1st 10-year CDROM 10-year WCM proceedings archive CDROM, June 2011