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Click here for the WCM2012 official website at NanoTech2012
Workshop on Compact Modeling at the Nanotech 2012
June 19-20, 2012
Venue Santa Clara Convention Center
Santa Clara, California, USA
Synopsis Compact Models (CMs) for circuit simulation have been at the heart of CAD tools for circuit design over the past decades, and are playing an ever increasingly important role in the nanometer system-on-chip (SOC) era.  As the mainstream MOS technology is scaled into the nanometer regime, development of a truly physical and predictive compact model for circuit simulation that covers geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes a major challenge.

Workshop on Compact Modeling (WCM) is one of the first of its kind in bringing people in the CM field together.  The objective of WCM is to create a truly open forum for discussion among experts in the field as well as feedback from technology developers, circuit designers, and CAD tool vendors.  The topics cover all important aspects of compact model development and deployment, within the main theme - compact models for circuit simulation, which are largely categorized into the following groups:

  • Intrinsic Models
    • Bulk MOSFET
    • SOI MOSFET (partial-/full-depletion)
    • Multiple-Gate FET (DG/TG/GAA)
    • High-Voltage/LDMOS
    • Thin-Film Transistor (TFT)
    • Schottky-Barrier/Tunneling FET (SB-FET/TFET)
    • Bipolar/Junction (BJT/HBT/SiGe/JFET)
    • HEMT (GaN/InGaP/InGaAs)
    • RF/noise
  • Extrinsic/Interconnect Models
    • Parasitic elements
    • Passive device
    • Diode
    • Resistor
    • ESD
    • Interconnect
  • Atomic/Quantum Models
    • Ballistic device
    • Carbon-Nanotube (CNFET)
    • Organic FET
  • Statistical Models
    • Statistical/variability
    • Reliability/hot carrier
    • Numerical/TCAD/table-based
  • Multi-Level Models
    • Subcircuit model
    • Gate/block model
    • Behavioral model
  • Model Extraction and Interface
    • Parameter extraction and optimization
    • Model-simulator interface
    • Model standardization
Invited Speakers Invited speakers from all over the world are listed below:
  • Narain Arora, Silterra, Malaysia
  • Yu Cao, Arizona State University, USA
  • Mansun Chan, Hong Kong University of Science and Technology, Hong Kong
  • Christian Enz, Swiss Center for Electronics and Microtechnology, Switzerland
  • Tor Fjeldly, Norwegian University of Science and Technology, Norway
  • Chenming Hu and Yogesh Chauhan, University of California at Berkeley, USA
  • Mitiko Miura-Mattausch, Hiroshima University, Japan
  • Paolo Pavan, Luca Larcher, and Andrea Padovani, Università di Modena e Reggio Emilia, Italy
  • Michael Schröter, University of Technology Dresden, Germany
  • Ehrenfried Seebacher, Austriamicrosystems AG, Austria
  • Yan Wang, Tsinghua University, China
  • Philip Wong and Ximeng Guan, Stanford University, USA
  • Xing Zhou, Nanyang Technological University, Singapore
WCM2012 Program has been posted at the Nanotech website.
Contributed Papers Contributed papers are solicitated for Oral/Poster presentations.  Please follow Nanotech website for instructions on abstract preparation and online submission by choosing an appropriate topic from the following link:
All contributed papers will go through Nanotech abstract review and the accepted papers will be notified by the conference organizer.

Information for authors and abstract preparation guidelines can be found at Nanotech website:

Contributed presentation slides have been posted after the conference.
(Click on each  to download the PDF file.  © Copyright of the PDF files belongs to the respective contributors.  Last update: Nov. 11, 2012.)
Download and save ...Download and save the entire ZIP file of presentation slides (27MB)
View SlidesWorkshop Program
View SlidesY. Chauhan, BSIM6: Symmetric Bulk MOSFET Model
View SlidesT. Fjeldly, Unified Modeling of Multigate MOSFETs Based on Isomorphic
Modeling Principles
View SlidesX. Zhou, Xsim: A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DGFinFETs
View SlidesY. Chauhan, Analytical Surface Potential Calculation in UTBSOI MOSFET with
Independent Back-Gate Control
View SlidesX. Zhou, Unified Regional Approach to High Temperature SOI DC/AC
View SlidesM. Chan, i-MOS: A Platform for Compact Modeling Sharing
View SlidesM. Schröter, Critical Review of CNTFET Compact Models
View SlidesY. Cao, Hierarchical Memory Modeling for Reliable Integration
View SlidesL. Larcher, Leakage Current in HfO2 Stacks: From Physical to Compact Modeling
View SlidesX. Zhou, An Analytical 2DEG Model Considering the Two Lowest Subbands
View SlidesT. Fjeldly, Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT
View SlidesN. Lu, Discreteness and Distribution of Drain Currents in FinFETs
View SlidesH. Trombley, A Fully Automated Method to Create Monte-Carlo MOSFET Model
Libraries for Statistical Circuit Simulations
View SlidesA. Napieralski, Boundary Condition Independence of Cauer RC Ladder Compact
Thermal Models
Websites for Proceedings Workshop proceedings will be available online after the conference.

official websites
WCM2011 website View 2011 WCM program and presentation slides
WCM2010 website View 2010 WCM program and presentation slides
WCM2009 website View 2009 WCM program and presentation slides
WCM2008 website View 2008 WCM program and presentation slides
WCM2007 website View 2007 WCM program and presentation slides
WCM2006 website View 2006 WCM program and presentation slides
WCM2005 website View 2005 WCM program and presentation slides
WCM2004 website
View 2004 WCM program and presentation slides
WCM2003 website View 2003 WCM program and presentation slides
WCM2002 website View 2002 WCM program and presentation slides

(Updated: Nov. 11, 2012)