SESSION 5: Modeling and Simulation — Compact Modeling

Co-Chairs Ronald van Langevelde, Philips Research Laboratories
Rafael Rios, Intel Corporation

This session deals with compact modeling, primarily of MOS devices. The invited talk of Miura-Mattausch,
et al., from Hiroshima University provides an overview of the physics-based HiSIM model. The following
paper by Rios, et al., from Intel highlights the issues with modeling halo devices. Next, Bianchi, et al.,
from STMicroelectronics discusses modeling of STI induced stress effects. The following paper by Na, et
al., from IBM proposes a performance metric for characterization with a novel definition of effective
current. Then Wang and Gildenblat from Pennsylvania State University provide a method to include
ballistic transport in compact MOS models. The following paper by Scholten, et al., from Philips discusses
the RF-noise behavior in CMOS. The last two papers by Bonani, et al., from Politecnico di Torino discuss
a way of including cyclostationary noise in compact modeling and subsequently give an example of this
type of noise in RF junction diodes.

HiSIM: A MOSFET Model for Circuit Simulation Connecting Circuit Performance with Technology

A Three-Transistor Threshold Voltage Model for Halo Processes

Accurate Modeling of Trench Isolation Induced Mechanical Stress Effects on MOSFET Electrical

The Effective Drive Current in CMOS Inverters

Scattering Matrix Based Compact MOSFET Model

Compact Modeling of Drain and Gate Current Noise for RF CMOS

Compact Modelling of Cyclostationary Noise in Semiconductor Devices: A Critical Discussion

A New, Closed-form Compact Model for the Cyclostationary Noise and LS Conversion Behaviour
of RF Junction Diodes