Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor is
an important device for high-voltage high-power applications. In this project,
an LDMOS transistor will be simulated using the TCAD simulator MEDICI.
Transistor dc/ac characteristics will be obtained by numerical simulations,
from which the basic device operations will be studied and understood.
Specific effects such as mobility and doping on the CV characteristics
will be investigated. The project provides the student with an opportunity
to be exposed to advanced devices and their related research topics.
E109: Numerical Investigation of Emerging Non-Classical
As bulk CMOS technology is heading towards the end of the technology
roadmap, non-classical MOSFET structures/technologies are emerging, such
as double-gate (DG), ultra-thin body (UTB), gate-all-around (GAA) silicon
nanowire (SiNW), and strained-silicon (s-Si) MOSFETs. This project will
explore structural and electrical characteristics of chosen devices through
numerical device simulations. Performance evaluations can be analyzed with
structural variations, with physical understanding of these candidates
of future technologies.
E151: Deep-Submicron MOSFET Characterization
by Numerical Simulation
This project aims at characterizing deep-submicron (DSM) MOSFETs through
numerical simulations. State-of-the-art technology computer-aided
design (TCAD) tools will be used to simulate transistor I-V characteristics.
Effect of process variations on device performance parameters, such as
threshold voltage, saturation current, leakage current, subthreshold swing,
transconductance, drain conductance, will be studied comprehensively.