NM6604: NTU-TUM (Green Electronics)

© 2007-2017

Semiconductor Process and Device Simulation

sq   Syllabus
Process models: diffusion, oxidation, implantation. Process variables/targets: doping profiles, junction depths, oxide thickness. Process simulation: Simulate a given sub-micron CMOS process recipe and study profiles and layer structures. Physical models. Numerical algorithms and solutions. Device performance parameters. Short-channel effects. DC simulations. Device simulation: Simulate the DC characteristics of the “fabricated” device and analyze device operation with respect to potential, field, and carrier distributions as well as terminal I–V characteristics. Wafer-split experiment. Device-target vs. process-variable relations. Transistor performance optimization/trade-offs through process variation. Technology development and optimization. Design of Experiment (DOE): Implement a computer experiment to study the scaling characteristics (varying gate length) of the given sub-micron technology. Study the influence of process variations on device performance parameters.
Download PDF Notes - VPI

Download PDF Design Exercise

sq     References

  • Simon Sze and Ming-Kwei Lee, Semiconductor Devices - Physics and Technology, 3rd ed., Wiley (2013).
  • Chenming Calvin Hu, Modern Semiconductor Devices for Integrated Circuits, Pearson (2010).
  • Yuan Taur and Tak H. Ning, Fundamentals of Modern VLSI Devices, Cambridge Univ. Press (2009).
  • Arora Narain, MOSFET Models for VLSI Circuit Simulation – Theory and Practice, Springer-Verlag (1993). Reprinted by World Scientific (2006).
  • note Online book by Zeghbroeck (Chap. 6 and 7)

    Cogenda VisualFab User's Guide Download PDF

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    This website is maintained by Dr. Zhou Xing.
    Send any comments to: exzhou@ntu.edu.sg.
    Last update: 24 August 2017