TCAD-Synthesis Approach to Deep-Submicron MOS Technology Development
Shesh Mani Pandey
(July 26, 2004 --)
This project is directed towards the development of a TCAD-synthesis approach to deep-submicron MOS technology characterisation and modelling. Emulation of a real wafer fabrication process and transistor electrical characterisation will be carried out through extensive simulation using the state-of-the-art technology computer-aided design (TCAD) tools, in which structural nonuniformities and transport nonlinearities are modelled. Simulation will be correlated to experimental data by providing a guide to technology developers to bracket the final optimum design. Combined with a physical-based compact model, this approach will demonstrate a first attempt at bridging technology development to circuit design in the deep-submicron era.