A compact deep-submicron MOSFET
gds model including hot-electron and thermoelectric effects
Xing Zhou, Siau Ben Chiah, and Khee Yong Lim
48, No. 12, pp. 2125-2131, December 2004.
(Manuscript received 7 January 2002; received in revised form 13 August
2003; accepted 3 June 2004)
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A compact Ids model with physical drain-conductance (gds)
modeling for deep-submicron MOSFETs is formulated based on first-principle
momentum-/energy-balance equations, which simultaneously includes the hot-electron
and thermoelectric effects in a unified compact form with two fitting parameters
and one-step extraction. The model has been verified with 0.18-mm
experimental data with good gds prediction.
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