A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects
Xing Zhou, Siau Ben Chiah, and Khee Yong Lim

Solid-State Electronics, Vol. 48, No. 12, pp. 2125-2131, December 2004.
(Manuscript received 7 January 2002; received in revised form 13 August 2003; accepted 3 June 2004)

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A compact Ids model with physical drain-conductance (gds) modeling for deep-submicron MOSFETs is formulated based on first-principle momentum-/energy-balance equations, which simultaneously includes the hot-electron and thermoelectric effects in a unified compact form with two fitting parameters and one-step extraction.  The model has been verified with 0.18-mm experimental data with good gds prediction.