De-embedding Length-Dependent Edge-Leakage Current in Shallow Trench Isolation Submicron MOSFETs

Xing Zhou and Khee Yong Lim

Solid-State Electronics, Vol. 46, No. 5, pp. 769-772, May 2002.
(Manuscript received 19 December 2000; received in revised form 26 June 2001.)

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A simple method is presented to de-embed the edge-leakage current in shallow trench isolation (STI) submicron MOSFETs from the measured terminal current.  The extremely nonlinear and length-/bias-dependent "subthreshold hump" has been modeled by a one-piece compact model using a two-step extraction procedure, which demonstrated excellent prediction to the measurement data.  The result also suggests that the edge leakage exhibits a similar current-voltage characteristics as the main MOSFET on the same wafer which, if not modeled as a separate parasitic transistor, would lead to wrong information on the main transistor's subthreshold slope.



  1. [] V. Re, M. Manghisoni, L. Ratti, V. Speziali, and G. Traversi, "Impact of lateral isolation oxides on radiation-induced noise degradation in CMOS technologies in the 100-nm regime," IEEE Trans. Nuclear Sci., Vol. 54, No. 6, pp. 2218-2226, Dec. 2007.