Threshold voltage definition and extraction for deep-submicron
X. Zhou, K.Y. Lim, W. Qian
Solid-State Electronics, Vol. 45,
No. 3, pp. 507-510, April 2001.
(Manuscript received February 4, 2000; revised October 17, 2000.)
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The subtle difference in MOSFET threshold voltage between the two popular
definitions, maximum-gm and constant-current, is investigated
in the deep-submicron regime. The result pinpoints to the importance
of the lateral-field effect in linear region at very short gate length,
and further supports the combined definition known as the "critical-current
at linear-threshold" method, which includes short-channel effects while
retaining the simplicity and consistency of the constant-current method.
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