Compact Modeling of Doped Symmetric
DG MOSFETs with Regional Approach
Karthik Chandrasekaran*, Zhaomin Zhu*, Xing Zhou*, Wangzuo Shangguan*,
Guan Huei See*, Siau Ben Chiah*, Subhash C. Rustagi**, and Navab Singh**
* School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
Phone: (65) 6790-4532. Fax: (65) 6793-3318. Email:
**Institute of Microelectronics, 11, Science Park Road, Singapore Science
Park II, Singapore 117685
Proc. of the NSTI Nanotech 2006 (WCM-MSM2006)
Boston, MA, May 7-11, 2006, vol. 3, pp.
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A compact model for the surface and mid-gap potentials of doped symmetric
double-gate MOSFETs is presented. A unified regional approach is
used to derive the model equations from Poisson equation. The fully-depleted
double-gate MOSFET has four regions of operation, accumulation, depletion,
weak or volume inversion, and strong inversion. The model is derived
physically in all regions, with expressions for the flat-band, fully-depleted,
and threshold voltages scalable over silicon channel doping and thickness,
and unified to obtain a single-piece explicit model for the surface potential
and mid-gap potential. The model has been verified in comparison
with numerical device potentials, charges, and capacitances for various
channel doping and thickness.
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