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*Proc. of the NSTI Nanotech 2006 (WCM-MSM2006)*

Boston, MA, May 7-11, 2006, vol. 3, pp. 749-752.

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A scalable short-channel MOSFET charge model valid for all bias regions is presented. As the device length is reduced, long-channel intrinsic charge model cannot predict the short-channel dynamic behavior correctly. The extrinsic capacitances, such as overlap capacitance and bias-dependent fringing capacitance, must be included in the charge model as they are comparable to the intrinsic capacitance at short-channel dimensions. In order to ensure model scalability over geometry, short-channel effects must be included in the core charge model. This paper extends the short-channel models, such as bulk-charge sharing and potential-barrier lowering, for charge modeling that is valid for all regions. The model is verified by comparison with numerical simulations for three short-channel devices, 0.5, 0.25 and 0.09 um. It is shown that the model accurately scales with the short-channel capacitances.

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