Unified Regional Charge-based Versus Surface-potential-based Compact Modeling Approaches
Xing Zhou*, Siau Ben Chiah*, Karthik Chandrasekaran*, Guan Huei See*, Wangzuo Shangguan*,
Shesh Mani Pandey**, Michael Cheng**, Sanford Chu**, and Liang-Choo Hsia**

* School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
Phone: (65) 6790-4532.  Fax: (65) 6791-2687. Email: exzhou@ntu.edu.sg
** Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, St. 2, Singapore 738406

Proc. of the NSTI Nanotech 2005 (WCM-MSM2005)

Anaheim, CA, May 8-12, 2005, WCM, pp. 25-30.

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This paper outlines the key features and advantages of the unified regional charge-based approach to MOSFET compact charge modeling in comparison with surface-potential-based approaches.  Physical piecewise solutions are regionally derived from Pao-Sah equation, in which bulk charge is modeled by direct addition of accumulation and depletion charges based on the unified regional (source-end) surface potential.  Drain-bias-dependent bulk and inversion charges are modeled with the unified regional charges in strong inversion using the non-pinned surface potential.  Results have been compared with the iterative solutions and validated with numerical data.  It has been extended to poly-accumulation/depletion/inversion effects with explicitly coupled quantum-mechanical effect as well as to strained-Si MOSFETs within the same unified model.