Unified Regional Charge-based
Versus Surface-potential-based Compact Modeling Approaches
Xing Zhou*, Siau Ben Chiah*, Karthik Chandrasekaran*, Guan Huei
See*, Wangzuo Shangguan*,
Shesh Mani Pandey**, Michael Cheng**, Sanford Chu**, and Liang-Choo
* School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
Phone: (65) 6790-4532. Fax: (65) 6791-2687. Email:
** Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial
Park D, St. 2, Singapore 738406
Proc. of the NSTI Nanotech 2005 (WCM-MSM2005)
Anaheim, CA, May 8-12, 2005, WCM, pp.
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This paper outlines the key features and advantages of the unified regional
charge-based approach to MOSFET compact charge modeling in comparison with
surface-potential-based approaches. Physical piecewise solutions
are regionally derived from Pao-Sah equation, in which bulk charge is modeled
by direct addition of accumulation and depletion charges based on the unified
regional (source-end) surface potential. Drain-bias-dependent bulk
and inversion charges are modeled with the unified regional charges in
strong inversion using the non-pinned surface potential. Results
have been compared with the iterative solutions and validated with numerical
data. It has been extended to poly-accumulation/depletion/inversion
effects with explicitly coupled quantum-mechanical effect as well as to
strained-Si MOSFETs within the same unified model.
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