Karthik Chandrasekaran, Xing Zhou, and Siau Ben Chiah
School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
Phone: (65) 6790-4532. Fax: (65) 6791-2687. Email: email@example.com
Proc. of the 7th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2004)
Boston, MA, March 7-11, 2004, Vol. 2, pp. 179-182.
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In this paper, an analytical threshold-voltage (Vt) model derived from Poisson equation for NMOS devices with a strained-silicon channel is described in terms of band, material, doping, and structure parameters and validated with Medici simulations. The model equations are derived based on bulk reference to preserve the symmetry of the model, and extended to short-channel devices based on previously-developed bulk-Si Vt model.