Unified Regional Approach to
Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs
Xing Zhou*, Siau Ben Chiah*, Karthik Chandrasekaran*, Khee Yong Lim**,
Lap Chan**, and Sanford Chu**
* School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
Phone: (65) 6790-4532. Fax: (65) 6791-2687. Email:
** Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial
Park D, St. 2, Singapore 738406
Proc. of the 7th International Conference on
Modeling and Simulation of Microsystems (WCM-MSM2004)
Boston, MA, March 7-11, 2004, Vol. 2, pp. 74-79.
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This paper presents our new developments of Xsim, a unified regional
threshold-voltage-based model for deep-submicron MOSFETs. New features
include complete reformulation with bulk reference, including transverse
electric field for effective mobility resulting in source-drain symmetry,
charge-based AC model fully consistent with DC without the need for C-V
data, and inclusion of poly-depletion effect for both DC and AC models.
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