Siau Ben Chiah*, Xing Zhou*, and Khee Yong Lim
* School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
Phone: (65) 6790-4532. Fax: (65) 6791-2687. Email: email@example.com
Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, St. 2, Singapore 738406
Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003)
San Francisco, CA, February 23-27, 2003, Vol. 2, pp. 338-341.
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This paper describes a scalable threshold voltage model for the entire range of drawn length and width, considering important short-channel, reverse short-channel, narrow-width, and inverse narrow-width effects using a unified effective channel doping. The model has a simple compact form that can used to characterize advanced deep-submicron devices with halo-implanted MOSFET. The model has been verified with the experimental data from 0.18-µm CMOS shallow trench isolation technology wafer.