Xsim: A Compact Model for Bridging Technology Developers
and Circuit Designers
School of Electrical & Electronic Engineering, Nanyang Technological
Nanyang Avenue, Singapore 639798, firstname.lastname@example.org
Proc. of the 5th International Conference on
Modeling and Simulation of Microsystems (WCM-MSM2002)
San Juan, Puerto Rico, April 22-25, 2002, pp.
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This paper describes the ideas and philosophy behind a new compact model
(CM) for deep-submicron MOSFETs, called Xsim, which has been developed
from scratch over the past few years. Similarities to and differences
from existing popular models are pointed out. The opinions on many
controversial debates in the CM field are given. The ultimate goal
of the CM development in the context of technology/circuit modeling and
optimization is outlined.
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