Xsim: A Compact Model for Bridging Technology Developers and Circuit Designers

Xing Zhou

School of Electrical & Electronic Engineering, Nanyang Technological University
Nanyang Avenue, Singapore 639798, exzhou@ntu.edu.sg

Proc. of the 5th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2002)

San Juan, Puerto Rico, April 22-25, 2002, pp. 710-714.

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This paper describes the ideas and philosophy behind a new compact model (CM) for deep-submicron MOSFETs, called Xsim, which has been developed from scratch over the past few years.  Similarities to and differences from existing popular models are pointed out.  The opinions on many controversial debates in the CM field are given.  The ultimate goal of the CM development in the context of technology/circuit modeling and optimization is outlined.



  1. [2] X. Zhou, "Multi-Level Modeling of Deep-Submicron MOSFETs and ULSI Circuits," (Invited Paper), Proc. of the 9th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES2002), Wroclaw, Poland, June 2002, pp. 39-44.
  2. [8] X. Zhou, S. B. Chiah, and K. Y. Lim, "A Technology-Based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization," (Invited Paper), Proc. of the 6th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2003), San Francisco, CA, Feb. 2003, vol. 2, pp. 266-269.