Semi-Empirical Approach to Modeling Reverse Short-Channel Effect in Submicron MOSFET's

S. B. Chiah*, X. Zhou*, K. Y. Lim†, Y. Wang*, A. See†, and L. Chan
*School of Electrical & Electronic Engineering, Nanyang Technological University,
Nanyang Avenue, Singapore 639798.  (Phone: 65-7904532, Fax: 65-7912687, Email:
†Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, Street 2, Singapore 738406

Proc. of the 4th International Conference on Modeling and Simulation of Microsystems (MSM2001).

Hilton Head Island, SC, March 19-21, 2001, pp. 486-489.

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A model for effective channel doping in submicron LDD nMOSFET's is presented by adding the effect of the lateral nonuniform pile-up charge centroid to the Gaussian profile with peak doping near the edge of the metallurgical channel.  The effect of the pile-up centroid on the threshold voltage parameter extraction is elaborated, from which semi-empirical relationships on all fitting parameters are formulated.  Threshold voltage versus gate length data from MEDICI-simulated devices with lateral Gaussian pile-up doping profiles are used for the verification of this model.



  1. [6] X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, "Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits," (Invited Paper), Proc. 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2001), Shanghai, Oct. 2001, Vol. 2, pp. 855-860.
  2. [2] S. B. Chiah, X. Zhou, K. Y. Lim, A. See, and L. Chan, "Physically-based approach to deep-submicron MOSFET compact model parameter extraction," to appear in Proc. 5th International Conference on Modeling and Simulation of Microsystems (WCM-MSM2002), San Juan, Puerto Rico, Apr. 2002.
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