Semi-Empirical Approach to Modeling Reverse Short-Channel
Effect in Submicron MOSFET's
S. B. Chiah*, X. Zhou*, K. Y. Lim†,
Wang*, A. See†, and L. Chan†
*School of Electrical & Electronic Engineering, Nanyang Technological
Nanyang Avenue, Singapore 639798. (Phone: 65-7904532,
65-7912687, Email: firstname.lastname@example.org)
†Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial
Park D, Street 2, Singapore 738406
Proc. of the 4th International Conference on
Modeling and Simulation of Microsystems (MSM2001).
Hilton Head Island, SC, March 19-21, 2001, pp. 486-489.
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A model for effective channel doping in submicron LDD nMOSFET's is presented
by adding the effect of the lateral nonuniform pile-up charge centroid
to the Gaussian profile with peak doping near the edge of the metallurgical
channel. The effect of the pile-up centroid on the threshold voltage
parameter extraction is elaborated, from which semi-empirical relationships
on all fitting parameters are formulated. Threshold voltage versus
gate length data from MEDICI-simulated devices with lateral Gaussian pile-up
doping profiles are used for the verification of this model.
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