Experimental Determination of Electrical, Metallurgical,
and Physical Gate Lengths of Submicron MOSFET's
Xing Zhou* and Khee Yong Lim†
*School of Electrical & Electronic Engineering, Nanyang Technological
Nanyang Avenue, Singapore 639798. (Phone: 65-7904532,
65-7912687, Email: email@example.com)
†Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial
Park D, Street 2, Singapore 738406
Proc. of the 4th International Conference on
Modeling and Simulation of Microsystems (MSM2001).
Hilton Head Island, SC, March 19-21, 2001, pp. 44-47.
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A simple, empirically-based method is developed for extraction of submicron
MOSFET's effective channel length (Leff) with critical-dimension
correction to poly-gate length (Lg) and correlation to
metallurgical channel length (Lmet). A self-consistent
compact model for the LDD lateral diffusion is proposed, which can be correlated
to the extracted Leff for process control. The
combined experimental determination of Leff, Lmet,
and Lg further validates the proposed "critical-current
at linear-threshold" ("Icrit@Vt0")
method, and provides important applications in statistical process control
and monitoring as well as deep-submicron technology characterization and
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