A Velocity-Overshoot Subthreshold Current Model for
Deep-Submicrometer MOSFET Devices
W. Qian, X. Zhou, Y. Wang, and K. Y. Lim
School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
Proc. of the 3rd International Conference on
Modeling and Simulation of Microsystems (MSM2000)
San Diego, CA, U.S.A., March 27-29, 2000, pp. 396-399.
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In this paper, a new theoretical approach to submicrometer MOSFET subthreshold
current modeling is presented. The diffusion and drift currents are calculated,
respectively. The effect of velocity overshoot on subthreshold current
is investigated. Comparison with MEDICI simulation results verifies the
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