A Velocity-Overshoot Subthreshold Current Model for Deep-Submicrometer MOSFET Devices

W. Qian, X. Zhou, Y. Wang, and K. Y. Lim

School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

Proc. of the 3rd International Conference on Modeling and Simulation of Microsystems  (MSM2000)

San Diego, CA, U.S.A., March 27-29, 2000, pp. 396-399.

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In this paper, a new theoretical approach to submicrometer MOSFET subthreshold current modeling is presented. The diffusion and drift currents are calculated, respectively. The effect of velocity overshoot on subthreshold current is investigated. Comparison with MEDICI simulation results verifies the model.