A VelocityOvershoot Subthreshold Current Model for
DeepSubmicrometer MOSFET Devices
W. Qian, X. Zhou, Y. Wang, and K. Y. Lim
School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
Proc. of the 3rd International Conference on
Modeling and Simulation of Microsystems (MSM2000)
San Diego, CA, U.S.A., March 2729, 2000, pp. 396399.
Copyright  Abstract
 References  Figures
 Reprint

Back
Copyright Notice
© 2000 Computational Publications. Personal use of this material
is permitted. However, permission to reprint/republish this material for
advertising or promotional purposes or for creating new collective works
for resale or redistribution to servers or lists, or to reuse any copyrighted
component of this work in other works must be obtained from Computational
Publications.
Abstract
In this paper, a new theoretical approach to submicrometer MOSFET subthreshold
current modeling is presented. The diffusion and drift currents are calculated,
respectively. The effect of velocity overshoot on subthreshold current
is investigated. Comparison with MEDICI simulation results verifies the
model.
References

[1] ShengLyang Jang and MamChun Hu, “An Analytical Drain Current Model
for Submicrometer and Deep Submicrometer MOSFET”, IEEE Trans. Electron
Devices, 44(11), pp. 18961902, 1996.

[2] Soonwon Hong and Kwyro Lee, “Extraction of Metal lurgical Effective
Channel Length in LDD MOSFETs”, IEEE Trans. Electron Devices, 42(8), pp.
14611466, 1995

[3] B. Hoefflinger, H. Sibbert, and G. Zimmer, “Model and performance of
hotelectron MOS transistors for VLSI”, IEEE Trans. Electron Devices, vol.
ED26, pp. 513520, 1979.

[4] P. J. Price, “On the flow equation in device simulation”, J Appl. Phys.,
vol.63, pp. 47184722, 1988.

[5] Ken’ichiro Sonoda, Kenji Taniguchi, and Chihiro Hamaguchi, “Analytical
Device Model for Submicrometer MOFETs”, IEEE Trans. Electron Devices, 38(12),
pp. 26622668, 1991.

[6] ZhiHong Liu, Chenming Hu, JianHui Huang, TungYi Chan, MinChie Jeng,
Ping K. Ko, Y. C. Cheng, “Threshold Voltage Model for DeepSubmicrometer
MOSFETs”, IEEE Trans. Electron Devices, 40(1), pp. 8693, 1993.

[7] G. W. Taylor, “Subthreshold conduction in MOSFETs”, IEEE. Trans. Electron
Devices, vol. ED25, pp. 337350, 1978.