Modeling of Threshold Voltage with Reverse Short
Channel Effect
K. Y. Lim, X. Zhou, and Y. Wang
School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
Proc. of the 3rd International Conference on
Modeling and Simulation of Microsystems (MSM2000)
San Diego, CA, U.S.A., March 2729, 2000, pp. 317320.
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Abstract
This paper presents a new reverse short channel effect (RSCE) model
for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional
empiricallybased RSCE models, the proposed model is derived and simplified
based on two Gaussian profiles to simulate boron pileup at the source
and drain edges of nMOS devices. The model has a simple compact form that
can be utilized to study and characterize the pileup profile of advanced
haloimplant MOSFETs. The analytical model has been applied to, and verified
with, experimental data of a 0.25µm CMOS process for various channel
length and substrate bias conditions.
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Citation

[5] Y. Wang, K. Y. Lim, W. Qian, and X.
Zhou, "Investigation of reverse short channel effect with numerical
and compact models," in Design, Modeling, and Simulation in Microelectronics,
Bernard Courtois, Serge N. Demidenko, L. Y. Lau, Editors, Proc. of SPIE,
Vol. 4228, pp. 366373, 2000.

[4] S. B. Chiah, X. Zhou, K.
Y. Lim, Y. Wang, A. See, and L. Chan, "Semiempirical approach to modeling
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Conference on Modeling and Simulation of Microsystems (MSM2001), Hilton
Head Island, SC, Mar. 2001, pp. 486489.

[5] X. Zhou, S. B. Chiah, K.
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modeling of deepsubmicron MOSFET's and ULSI circuits," (Invited Paper),
Proc. 6th International Conference on SolidState and IntegratedCircuit
Technology (ICSICT2001), Shanghai, Oct. 2001, Vol. 2, pp. 855860.