Physics-Based Threshold Voltage Modeling with Reverse
Short Channel Effect
Khee Yong Lim, Xing Zhou, and Yuwen Wang
School of Electrical & Electronic Engineering, Nanyang
Nanyang Avenue, Singapore 639798. email@example.com
Journal of Modeling and Simulation of Microsystems
2, No. 1, pp. 51-56, 2001.
(Manuscript received in Cambridge, MA, USA, 19th February 2000)
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This paper presents a physic-based reverse short channel effect (RSCE)
model for threshold voltage (Vth) modeling of deep submicron
MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed
model is derived based on two Gaussian pile-up profiles located at the
source and drain edges of a MOSFET. The model has a simple compact form
that can be utilized to characterize the advanced halo-implant MOSFETs.
A detailed comparison of the proposed RSCE model with the previously proposed
model is also presented. The analytical model has been applied to, and
verified with, experimental data of a 0.25-µm CMOS process for ten
different gate lengths as well as various drain and substrate bias conditions.
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