compact surface-potential and drain-current models for generic asymmetric
Z. M. Zhu, X. Zhou, K. Chandrasekaran, S. C.
Rustagi, and G. H. See
Japanese Journal of Applied Physics,
Vol. 46, No. 4B, pp. 2067-2072, 2007.
(Manuscript received September 15, 2006; accepted
November 21, 2006; published online April 24, 2007)
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In this paper, explicit surface potentials for undoped asymmetric double-gate
(DG) MOSFETs suitable for compact model development are presented for the
first time. The model is physically derived from Poisson's equation
in each region of operation and adopted in the unified regional approach.
The proposed model is physically scalable with oxide/channel thicknesses
and has been verified with the generic implicit solutions for independent
gate biases as well as for different gate/oxide materials. The model
is extendable to SOI and symmetric-DG MOSFETs. Finally a continuous,
explicit drain-current equation has been derived based on the developed
explicit surface-potential solutions.
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