Xing Zhou · Guojun Zhu · Guan Huei See · Karthik Chandrasekaran · Siau Ben Chiah · Khee Yong Lim

*Journal
of Computational Electronics*, Vol.
10, No. 1, pp. 121-135, Online: Mar. 8, 2011.
(*Invited
Paper*)

**Copyright | Abstract
| References | Reprint
| Back**

© *2011 Springer Science+Business Media LLC*.

This paper reviews the development of the MOSFET model (Xsim), for unification of various types of MOS devices, such as bulk, partially/fully-depleted SOI, double-gate (DG) FinFETs and gate-all-around (GAA) silicon-nanowires (SiNWs), based on the unified regional modeling (URM) approach. The complete scaling of body doping and thickness with seamless transitions from one structure to another is achieved with the unified regional surface potential, in which other effects (such as those due to poly-gate doping and quantum-mechanical) can be incorporated. The unique features of the Xsim model and the essence of the URM approach are described.

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