W. Z. Shangguan, X. Zhou, S. B. Chiah, G. H. See, and K. Chandrasekaran
Journal of Applied Physics,
Vol. 97, 123709, 15 June 2005
(Manuscript received 20 December 2004; accepted for publication 18 April 2005.)
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We present a compact gate-current model based on the scattering matrix method for the metal-oxide-semiconductor devices. The analytical integration of the tunneling current over the incident energy is simplified by making use of the single tunneling energy approximation, and the model error is further reduced by introducing different effective conduction band edges for the supply function and for the transmission coefficient function. Results calculated by the proposed model agree with the experimental data with satisfactory accuracy.