Unified Regional Charge Model with Non-pinned Surface Potential
(Invited Paper)

Xing Zhou*, Siau Ben Chiah*, Karthik Chandrasekaran*, Guan Huei See*, Wangzuo Shangguan*, Shesh Mani Pandey, Chew Hoe Ang, Michael Cheng, Sanford Chu, Liang-Choo Hsia
* School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, Street 2, Singapore 738406
Email: exzhou@ntu.edu.sg

Proc. of the 2nd International Workshop on Compact Modeling (IWCM-2005) at the Asia and South Pacific Design Automation Conference (ASP-DAC2005), Shanghai, January 18-21, 2005, pp. 13-17.

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This paper presents a complete single-piece MOSFET charge model based on non-pinned surface potential in a unified regional formulation.  The regional model predicts physical behavior asymptotically while joins seamlessly at the flat-band and threshold-voltage transitions with Cinf continuity for all regions of operation.  The model is consistent with conventional threshold-voltage-based models while maintaining symmetry at zero drain-source bias.