Unified Regional Charge Model
with Non-pinned Surface Potential
Xing Zhou*, Siau Ben Chiah*, Karthik Chandrasekaran*,
Guan Huei See*, Wangzuo Shangguan*,
Shesh Mani Pandey†, Chew Hoe Ang†,
Michael Cheng†, Sanford Chu†,
* School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial
Park D, Street 2, Singapore 738406
Proc. of the 2nd International Workshop on
Compact Modeling (IWCM-2005)
at the Asia and South Pacific Design Automation
Shanghai, January 18-21, 2005, pp. 13-17.
Copyright | Abstract
| References | Citation | Reprint
© Personal use of this material is permitted. However, permission
to reprint/republish this material for advertising or promotional purposes
or for creating new collective works for resale or redistribution to servers
or lists,or to reuse any copyrighted component of this work in other works
must be obtained from the copyright owner.
This paper presents a complete single-piece MOSFET charge model based
on non-pinned surface potential in a unified regional formulation.
The regional model predicts physical behavior asymptotically while joins
seamlessly at the flat-band and threshold-voltage transitions with Cinf
continuity for all regions of operation. The model is consistent
with conventional threshold-voltage-based models while maintaining symmetry
at zero drain-source bias.
 K. Joardar, K. K. Gullapalli, C. C. McAndrew, M. E. Burnham, and A.
Wild, “An improved MOSFET model for circuit simulation,” IEEE Trans. Electron
Devices, vol. 45, pp. 134–148, Jan. 1998.
 C. C. McAndrew and J. J. Victory, “Accuracy of approximations in MOSFET
charge models,” IEEE Trans. Electron Devices, vol. 49, pp. 72–81, Jan.
 R. V. Langevelde and F. M. Klaassen, “An Explicit surface-potential-based
MOSFET model for circuit simulation,” Solid-State Electron., vol. 44, pp.
409–418, Dec. 1998.
 G. Gildenblat, T.-L. Chen, X. Gu, H. Wang, and X. Cai, “SP: An advanced
surface-potential-based compact MOSFET model,” in Proc. 2003 CICC, San
Jose, Sept. 2003, pp. 233–240.
 H. C. Pao and C. T. Sah, “Effects of diffusion current on characteristics
of metal-oxide (insulator)-semiconductor transistors,” Solid-State Electron.,
vol. 9, pp. 927–937, 1966.
 W. Wu, T.-L. Chen, G. Gildenblat, and C. C. McAndrew, “Physics-based
mathematical conditioning of the MOSFET surface potential equation,” IEEE
Trans. Electron Devices, vol. 51, pp. 1196–1200, July 2004.
 D. E. Ward and R. W. Dutton, “A charge-oriented model for MOS transistor
capacitances,” IEEE J. Solid-State Circuits, vol. SC-13, p. 703–708, Oct.
 N. Arora, MOSFET Models for VLSI Circuit Simulation— Theory and Practice,
New York: Springer-Verlag, 1993.
 X. Zhou, S. B. Chiah, K. Chandrasekaran, W. Shangguan, G. H. See, C.
H. Ang, S. Chu, and L.-C. Hsia “Xsim: Unified regional approach to compact
modeling for next generation CMOS,” in Proc. ICSICT-2004, Beijing, Oct.
2004, pp. 924–929.
 S.-W. Lee, C. Liang, C.-S. Pan, W. Lin, and J. B. Mark, “A study on
the physical mechanism in the recovery of gate capacitance to Cox in implanted
polysilicon MOS structures,” IEEE Electron Device Lett., vol. 13, pp. 2–4,