Investigation of Reverse Short Channel Effect with Numerical and Compact Models

Y. Wang, K. Y. Lim, W. Qian, and X. Zhou

School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

Proc. of SPIE, Vol. 4228, Design, Modeling, and Simulation in Microelectronics, Bernard Courtois, Serge N. Demidenko, L. Y. Lau, Editors, pp. 366-373, 2000.

Oral presentation at the 2nd International Symposium on Microelectronics and Assembly (ISMA2000)

Singapore, Nov. 27 - Dec. 1, 2000.

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In this paper, a physically based reverse short channel effect (RSCE) threshold voltage (Vth) compact model is investigated and compared with numerical simulation.  A new method to predict RSCE using the compact model is given, which is supported by the TCAD data.  A wide range of Vth predictions of n-channel MOSFET’s with pile-up structures is conducted.  Good prediction results are achieved between the RSCE compact model and TCAD data.  The results further support the physics-based RSCE model, which is useful for both circuit simulation and technology development as well as device design.