Surface-Potential-Based Model of Reverse Short Channel Effect in Submicrometer MOSFETs with Nonuniform Lateral Channel Doping

W. Qian, X. Zhou, Y. Wang, and K. Y. Lim

School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798

Proc. of SPIE, Vol. 4228, Design, Modeling, and Simulation in Microelectronics, Bernard Courtois, Serge N. Demidenko, L. Y. Lau, Editors, pp. 243-248, 2000.

Oral presentation at the 2nd International Symposium on Microelectronics and Assembly (ISMA2000)

Singapore, Nov. 27 - Dec. 1, 2000.

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In this paper, a consine-like function instead of a box or a Gaussion-like function is constructed as the pile-up doping in device channel near LDD.  The surface potential distribution of nonuniform doping channel is obtained by using Gauss' Law.  Threshold voltage roll-up is observed, which is due to the pile-up doping.  The simulation results are verified by MEDICI numerical data..