Surface-Potential-Based Model of Reverse Short Channel
Effect in Submicrometer MOSFETs with Nonuniform Lateral Channel Doping
W. Qian, X. Zhou, Y. Wang, and K. Y. Lim
School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
Proc. of SPIE, Vol. 4228, Design,
Modeling, and Simulation in Microelectronics, Bernard Courtois, Serge N.
Demidenko, L. Y. Lau, Editors, pp. 243-248, 2000.
Oral presentation at the 2nd International
Symposium on Microelectronics and Assembly (ISMA2000)
Singapore, Nov. 27 - Dec. 1, 2000.
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In this paper, a consine-like function instead of a box or a Gaussion-like
function is constructed as the pile-up doping in device channel near LDD.
The surface potential distribution of nonuniform doping channel is obtained
by using Gauss' Law. Threshold voltage roll-up is observed, which
is due to the pile-up doping. The simulation results are verified
by MEDICI numerical data..
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