A Compact MOSFET Ids
Model for Channel-Length Modulation Including Velocity Overshoot
Xing Zhou and Khee Yong Lim
School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
Phone: (65) 790-4532. Fax: (65) 791-2687. Email:
Proc. of the 1999 International Semiconductor
Device Research Symposium (ISDRS-99)
Charlottesville, VA, December 1-3, 1999.
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A compact model for MOSFET channel-length modulation based on velocity
overshoot is presented, which has a simple familiar form with one fitting
parameter embedded in the length- and bias-dependent effective Early voltage.
The model physically describes the internal field distributions in the
velocity-saturation region and interprets them in terms of the effective
potential drop and average velocity in the intrinsic channel, and yet,
it is easy to characterize from measured terminal current.
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