A Compact Deep-Submicron MOSFET gds Model Including Hot-Electron and Thermoelectric Effects

Xing Zhou*, Siau Ben Chiah*, and Khee Yong Lim†

* School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
Phone: (65) 790-4532.  Fax: (65) 791-2687. Email: exzhou@ntu.edu.sg
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, St. 2, Singapore 738406

Proc. of the 2001 International Semiconductor Device Research Symposium (ISDRS-01)

Washington DC, December 5-7, 2001, pp. 653-656.

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A compact Ids model with physical gds modeling for deep-submicron MOSFETs is formulated based on first-principle momentum/energy balance equations, which simultaneously includes the hot-electron and thermoelectric effects in a unified compact form with one (or two) fitting parameter(s) and one-step extraction.  The model has been verified with 0.18-µm experimental data with good gds prediction.



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  2. [17] K. Y. Lim and X. Zhou, "An analytical effective channel-length modulation model for velocity overshoot in submicron MOSFETs based on energy-balance formulation," Microelectronics Reliability, Vol. 42, No. 12, pp. 1857-1864, Dec. 2002.
  3. [12] X. Zhou, S. B. Chiah, and K. Y. Lim, "A compact deep-submicron MOSFET gds model including hot-electron and thermoelectric effects," to appear in Solid-State Electron., 2004.