A Compact Deep-Submicron MOSFET gds
Model Including Hot-Electron and Thermoelectric Effects
Xing Zhou*, Siau Ben Chiah*, and Khee Yong Lim†
* School of Electrical & Electronic Engineering, Nanyang Technological
University, Nanyang Avenue, Singapore 639798
Phone: (65) 790-4532. Fax: (65) 791-2687. Email:
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial
Park D, St. 2, Singapore 738406
Proc. of the 2001 International Semiconductor
Device Research Symposium (ISDRS-01)
Washington DC, December 5-7, 2001, pp. 653-656.
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A compact Ids model with physical gds modeling for deep-submicron
MOSFETs is formulated based on first-principle momentum/energy balance
equations, which simultaneously includes the hot-electron and thermoelectric
effects in a unified compact form with one (or two) fitting parameter(s)
and one-step extraction. The model has been verified with 0.18-µm
experimental data with good gds prediction.
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S. B. Chiah, and K. Y. Lim, "A compact deep-submicron MOSFET gds model
including hot-electron and thermoelectric effects," to appear in Solid-State