A Unified Compact Model for
Emerging DG FinFETs and GAA Nanowire MOSFETs Including Long/Short-Channel
and Thin/Thick-Body Effects
Xing Zhou*, Guojun Zhu, Machavolu K. Srikanth, Shihuan Lin, Zuhui Chen,
Junbin Zhang, and Chengqing Wei
School of Electrical & Electronic Engineering, Nanyang Technological
University, Singapore 639798
* Email: firstname.lastname@example.org
Proc. of the 10th International Conference
on Solid-State and Integrated-Circuit Technology (ICSICT2010),
Shanghai, China, Nov. 2010, pp.
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This paper presents the characteristics of ideal double-gate/gate-all-around
(DG/GAA) MOSFETs, including the long/short-channel and thin/thick-body
effects. A unified compact model (Xsim) based on the unified regional
modeling (URM) approach for the generic DG/GAA MOSFET is used to demonstrate
the expected behaviors, which should be included in the core model describing
such emerging devices.
 X. Zhou, et. al., “Unified regional modeling approach to emerging multiple-gate/nanowire
MOSFETs,” in Proc. ICSICT, 2008, B1.2.
 R. H. Kingston and S. F. Neustadter, “Calculation of the space charge,
electric field, and free carrier concentration at the surface of a semiconductor,”
J. Appl. Phys., vol. 26, no. 6, pp. 718–720, Jun. 1955.
 W. Z. Shangguan, et. al., “Surface-potential solution for generic undoped
MOSFETs with two gates,” IEEE Trans. Electron Devices, vol. 54, no. 1,
pp. 169–172, Jan. 2007.
 G. H. See, “Scalable Compact Modeling for Nanometer CMOS Technology,”
Ph.D. thesis, Nanyang Technological Univ., 2008.