A Unified Compact Model for Emerging DG FinFETs and GAA Nanowire MOSFETs Including Long/Short-Channel and Thin/Thick-Body Effects
(Invited Paper)
Xing Zhou*, Guojun Zhu, Machavolu K. Srikanth, Shihuan Lin, Zuhui Chen, Junbin Zhang, and Chengqing Wei
School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798

* Email: exzhou@ntu.edu.sg

Proc. of the 10th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT2010), Shanghai, China, Nov. 2010, pp. 1725-1728.

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This paper presents the characteristics of ideal double-gate/gate-all-around (DG/GAA) MOSFETs, including the long/short-channel and thin/thick-body effects.  A unified compact model (Xsim) based on the unified regional modeling (URM) approach for the generic DG/GAA MOSFET is used to demonstrate the expected behaviors, which should be included in the core model describing such emerging devices.