Xsim: Unified Regional Approach to Compact Modeling for Next Generation CMOS
(Invited Paper)

Xing Zhou*, Siau Ben Chiah*, Karthik Chandrasekaran*, Wangzuo Shangguan*, Guan Huei See*, Chew Hoe Ang, Sanford Chu, Liang-Choo Hsia
* School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
† Chartered Semiconductor Manufacturing Ltd, 60 Woodlands Industrial Park D, Street 2, Singapore 738406
Email: exzhou@ntu.edu.sg

Proc. of the 7th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2004), Beijing, October 18-21, 2004, pp. 924-929.

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This paper describes the approaches in the development of Xsim, a unified regional threshold-voltage-based model for deep-submicron MOSFETs.  In comparison to popular surface-potential-based models, our approach has the advantages of correlation to technology data, minimum data and one-iteration extraction, single-piece charge models from accumulation to strong inversion with extendibility to poly-depletion and strained-Si, as well as selectable accuracy with the same parameter set.