Modelling of Threshold Voltage with Non-uniform
K. Y. Lim and X. Zhou
School of Electrical & Electronic Engineering, Nanyang Technological
Nanyang Avenue, Singapore 639798
(Phone: 65-7991368, Fax: 65-7912687, Email: email@example.com)
Proc. of the 1998 IEEE International Conference
on Semiconductor Electronics (ICSE’98)
Malaysia, November 24-26, 1998, pp. 27-31.
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A simple analytical threshold voltage equation for modelling non-uniform
channel doping is derived, which takes the peak doping concentration and
peak location as inputs with a single process-dependent fitting parameter.
The model has been verified with extensive numerical simulation results
and can be applied to real devices for a wide range of non-uniform doping
profiles with a simple, empirical parameter extraction.
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