A Predictive Semi-Analytical Threshold Voltage Model for Deep-Submicron MOSFET's

K. Y. Lim*, X. Zhou*, D. Lim, Y. Zu, H. M. Ho, K. Loiko, C. K. Lau, M. S. Tse*, and S. C. Choo*

*School of Electrical & Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798
(Phone: 65-7991368, Fax: 65-7912687, Email: exzhou@ntu.edu.sg)

Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D, Street 2, Singapore 738406

1998 IEEE Hong Kong Electron Devices Meeting (HKEDM98)

Hong Kong, August 29, 1998, pp. 114-117.

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A compact threshold voltage model is developed for the prediction of deep-submicron MOSFET’s scaling characteristic based on comprehensive 2-D device simulation, empirical formulation, and correlation to experimental data.  The model incorporates the nonuniformities and nonlinearities from 2-D device physics, relates to process variables, and yet is efficient to use.



  1. [6] K. Y. Lim and X. Zhou, "Modelling of threshold voltage with non-uniform substrate doping," Proc. 1998 IEEE International Conference on Semiconductor Electronics (ICSE’98), Malaysia, Nov. 1998, pp. 27-31.
  2. [2] K. Y. Lim, X. Zhou, and D. Lim, "A predictive length-dependent saturation current model based on accurate threshold voltage modeling," Proc. 2nd International Conference on Modeling and Simulation of Microsystems (MSM99), San Juan, Puerto Rico, Apr. 1999, pp. 423-426.
  3. [3] X. Zhou, S. B. Chiah, K. Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, "Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits," (Invited Paper), Proc. 6th International Conference on Solid-State and Integrated-Circuit Technology (ICSICT-2001), Shanghai, Oct. 2001, Vol. 2, pp. 855-860.

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