A Compact Model for Undoped
Symmetric Double-Gate MOSFETs with Schottky-Barrier Source/Drain
G. J. Zhu, X. Zhou, T. S. Lee, L. K. Ang, G. H. See, and S. H.
School of Electrical and Electronic Engineering, Nanyang Technological
University, Singapore 639798
Proc. of the 2008 European Solid-State Device
Research Conference (ESSDERC2008).
Edinburgh, UK, September 15-19, 2008, pp. 182-185.
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A physics-based compact model for undoped symmetric double-gate MOSFETs
with Schottky-barrier source and drain is formulated based on the quasi-2D
surface-potential solution and Miller–Good tunneling method. Essential
physics due to the screening of the gate field by free carriers, which
is absent in previous literatures, is included in the model. Electron
and hole transports for all positive/negative gate/drain biases are modeled
within the single-piece core model that scales with device geometry, body/oxide
thickness, SB workfunction, and source/drain contact size. Unlike
2D numerical simulation, the proposed compact model, which is simple and
fast yet accurate, is circuit-compatible and suitable for future VLSI circuit
design using SB-MOS devices. The proposed modeling methodology can
be easily extended to handle other promising devices such as SB silicon
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