Source-Drain Symmetry in Unified
Regional MOSFET Model
Siau Ben Chiah, Xing Zhou,
Senior Member, IEEE,
Khee Yong Lim,
Member, IEEE, Lap Chan, and Sanford Chu,
IEEE Electron Device Letters,
Vol. 25, No. 5, pp. 311-313, May 2004
(Manuscript received December 8, 2003; revised
February 17, 2004.)
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This paper investigates major sources of asymmetry in a MOSFET compact
model by comparing source versus bulk reference in the drain current, effective
field, and effective mobility equations. Contrary to the general
belief that a regional threshold-voltage (Vt) based model may pose symmetry
problem, we demonstrate that even with the simple source-extrapolated Vt-based
model, it can be symmetric if the drain current and the effective transverse
field are derived with bulk as the reference, and the lateral-field effective
mobility are properly modeled.
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