SourceDrain Symmetry in Unified
Regional MOSFET Model
Siau Ben Chiah, Xing Zhou,
Senior Member, IEEE,
Khee Yong Lim,
Member, IEEE, Lap Chan, and Sanford Chu,
Member,
IEEE
IEEE Electron Device Letters,
Vol. 25, No. 5, pp. 311313, May 2004
(Manuscript received December 8, 2003; revised
February 17, 2004.)
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Abstract
This paper investigates major sources of asymmetry in a MOSFET compact
model by comparing source versus bulk reference in the drain current, effective
field, and effective mobility equations. Contrary to the general
belief that a regional thresholdvoltage (Vt) based model may pose symmetry
problem, we demonstrate that even with the simple sourceextrapolated Vtbased
model, it can be symmetric if the drain current and the effective transverse
field are derived with bulk as the reference, and the lateralfield effective
mobility are properly modeled.
References

[1] Y. P. Tsividis, Operation and Modeling of the MOS Transistor, 2nd edition,
New York: McGrawHill, 1999.

[2] K. Joardar, K. K. Gullapalli, C. C. McAndrew, M. E. Burnham, and A.
Wild, “An improved MOSFET model for circuit simulation,” IEEE Trans. Electron
Devices, vol. 45, pp. 134–148, Jan. 1998.

[3] Y. Cheng, M. Chan, K. Hui, M.C. Jeng, Z. Liu, J. Huang, K. Chen, J.
Chen, R. Tu, P. K. Ko, and C. Hu., BSIM3v3 Manual, Berkeley, CA: UC Berkeley
Press, 1995–1996.

[4] Philips Semiconductor Introduction of MOS Model 9, [Online] AVailable:
http://www.semiconductors.philips.com/Philips_Models/mos_models/model9.

[5] N. D. Arora, R. Rios, C. Huang, and K. Raol, “PCIM: a physically based
continuous shortchannel IGFET model for circuit simulation,” IEEE Trans.
Electron Devices, vol. 41, pp. 988–997, June 1994.

[6] C. C. Enz, F. Krummenacher, and E. A. Vittoz, “An analytical MOS transistor
model valid in all regions of operation and dedicated to lowvoltage and
lowcurrent applications,” J. Analog Integr. Circuits and Signal Processing,
vol. 8, pp. 83–114, July 1995.

[7] A. G. Sabnis and J. T. Clemens, “Characterization of the electron mobility
in the inverted <100> Si surface,” in 1979 IEDM Tech. Dig., pp. 18–21.

[8] S. Matsumoto, K. Hisamitsu, M. Tanaka, H. Ueno, and M. MiuraMattausch,
“Validity of mobility universality for scaled metal–oxide–semiconductor
fieldeffect transistors down to 100 nm gate length,” J. Appl. Phys., vol.
92, no. 9, pp. 5228–5232, Nov. 2002.

[9] T.L. Chen and G. Gildenblat, “Analytical approximation for the MOSFET
surface potential,” SolidState Electron., vol. 45, pp. 335–339, 2001.

[10] —, “Symmetric bulk charge linearisation in chargesheet MOSFET model,”
Electron. Lett., vol. 37, pp. 791–793, 2001.

[11] N. Arora, MOSFET Models for VLSI Circuit Simulation—Theory and
Practice, Wien, New York: SpringerVerlag, 1993.

[12] J. R. Brews, “A charge sheet model of the MOSFET,” SolidState Electron.,
vol. 21, pp. 345–355, 1978.

[13] K. Y. Lim and X. Zhou, “A Physicallybased semiempirical effective
mobility model for MOSFET compact IV modeling,” SolidState Electron.,
vol. 45, pp. 193197, Jan. 2001.

[14] C. G. Sodini, P. K. Ko, and J. L. Moll, “The effect of high fields
on MOS device and circuit performance,” IEEE Trans. Electron Devices, vol.
ED31, pp. 1386–1396, 1984.

[15] N. D. Arora, R. Rios, C. L. Huang, K. Raol, IEEE Trans. Electron Devices,
vol. 41, pp. 988–997, June 1994.

[16] G. Gildenblat and T.L. Chen, “Overview of an advanced surfacepotentialbased
MOSFET model (SP),” in Proc. MSM2002, San Juan, Puerto Rico, Apr. 2002,
pp. 657–661.

[17] X. Zhou, S. B. Chiah, and K. Y. Lim, “A technologybased compact model
for predictive deepsubmicron MOSFET modeling and characterization,” in
Proc. MSM2003, San Francisco, CA, Feb. 2003, pp. 266–269.
Citation
