Source-Drain Symmetry in Unified Regional MOSFET Model

Siau Ben Chiah, Xing Zhou, Senior Member, IEEE, Khee Yong Lim, Member, IEEE, Lap Chan, and Sanford Chu, Member, IEEE

IEEE Electron Device Letters, Vol. 25, No. 5, pp. 311-313, May 2004
(Manuscript received December 8, 2003; revised  February 17, 2004.)

Copyright | Abstract | References | Figures | Citation | Reprint | Back


This paper investigates major sources of asymmetry in a MOSFET compact model by comparing source versus bulk reference in the drain current, effective field, and effective mobility equations.  Contrary to the general belief that a regional threshold-voltage (Vt) based model may pose symmetry problem, we demonstrate that even with the simple source-extrapolated Vt-based model, it can be symmetric if the drain current and the effective transverse field are derived with bulk as the reference, and the lateral-field effective mobility are properly modeled.