A PhysicallyBased SemiEmpirical Series Resistance
Model for DeepSubmicron MOSFET IV Modeling
Khee Yong Lim, Student Member, IEEE and Xing Zhou,
Senior
Member, IEEE
IEEE Transactions on Electron Devices,
Vol. 47, No. 6, June 2000, pp. 13001302.
(Manuscript received August 26, 1999; revised January 31, 2000.)
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Abstract
A physicallybased series resistance model for deepsubmicron MOSFET
is presented, which includes a biasdependent (intrinsic) component and
a biasindependent (extrinsic) component. The model is semiempirical
and consists of two physicsbased fitting parameters to be extracted with
a single measurement, which can be extended to all gatelength and bias
conditions. The model can be applied to draincurrent prediction
and optimization due to process fluctuations such as LDD junction depth
and spacer thickness.
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