MOSFET Subthreshold Compact
Modeling with Effective Gate Overdrive
Khee Yong Lim,
Member, IEEE, and Xing Zhou,
IEEE Transactions on Electron Devices,
Vol. 49, No. 1, pp. 196-199, January 2002.
(Manuscript received May 1, 2001; revised July
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In this brief, previously-proposed one-region MOSFET drain current (Ids)
model is improved in the subthreshold modeling. The compact model
is derived based on first-principle drift-diffusion formulation with the
correct drift and diffusion currents in strong inversion and subthreshold,
respectively. The new model has only one fitting parameter for subthreshold
slope and can ensure excellent continuity with smooth transition from subthreshold
to strong-inversion regimes, including the moderate-inversion region of
growing importance for low-voltage and low-power circuits.
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