Unified MOSFET Compact IV Model Formulation
through PhysicsBased Effective Transformation
Xing Zhou, Senior Member, IEEE, and Khee Yong Lim,
Student
Member, IEEE
IEEE Transactions on Electron Devices,
Vol. 48, No. 5, pp. 887896, May 2001.
(Manuscript received May 31, 2000; revised October 4, 2000)
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Abstract
A oneregion compact I_{ds} model from subthreshold to
saturation, which resembles the same form as the wellknown longchannel
model but includes all major shortchannel effects in deepsubmicron MOSFET's,
has been formulated through physicsbased effective transformation.
The model has 23 processdependent fitting parameters, which requires an
11step, oneiteration extraction procedure. The new approach to
modeling channellength modulation, subthreshold diffusion current, and
edgeleakage current, all in a compact form, has been verified with the
0.25mm experimental data. The model covers
the full range of gate length (without "binning") and bias conditions,
and can be correlated to true process variables for aiding technology development.
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