A New "CriticalCurrent at LinearThreshold" Method
for Direct Extraction of DeepSubmicron MOSFET Effective Channel Length
X. Zhou, Member, IEEE, K. Y. Lim, Student Member,
IEEE, and D. Lim
IEEE Transactions on Electron Devices,
Vol. 46, No. 7, pp. 14921494, July 1999.
(Manuscript received January 7, 1999; revised March 24, 1999.)
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Abstract
A novel method for direct extraction of deepsubmicron MOSFET effective
channel length is proposed, which requires only a single measurement of
the “criticalcurrent at linearthreshold” (“I_{crit} @
V_{t}_{0}”)
based on the maximumg_{m} definition. With a simple calibration
of the channel sheet resistance from the longchannel Icrit data, the effective
channel length of any shortchannel device on the same wafer can be determined
with one measurement of I_{crit} @ V_{t}_{0}
: Meanwhile, an averaged (modeled) effective channel length can be obtained
from the same data set with a simple algorithm, which can be used for device/circuit
modeling.
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[10] —, “A general approach to compact threshold voltage formulation based
on 2D numerical simulation and experimental correlation for deepsubmicron
ULSI technology development,” submitted for publication.

[11] X. Zhou and K. Y. Lim, “Experimental determination of electrical,
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[12] X. Zhou, K. Y. Lim, and D. Lim, “A predictive lengthdependent saturation
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and Actuators (MSM99), Puerto Rico, Apr. 1999, pp. 423–426.
Citation

[9] X. Zhou, K. Y. Lim, and D. Lim,
"A simple and unambiguous definition of threshold voltage and its implications
in deepsubmicron MOS device modeling," IEEE Trans. Electron Devices, Vol.
46, No. 4, pp. 807809, Apr. 1999.

[10] X. Zhou, K. Y. Lim, and D. Lim,
"A general approach to compact threshold voltage formulation based on 2D
numerical simulation and experimental correlation for deepsubmicron ULSI
technology development," IEEE Trans. Electron Devices, Vol. 47, No. 1,
pp. 214221, Jan. 2000.

[9] X. Zhou and K. Y. Lim, "Experimental
determination of electrical, metallurgical, and physical gate lengths of
submicron MOSFET's," Proc. 4th International Conference on Modeling and
Simulation of Microsystems (MSM2001), Hilton Head Island, SC, Mar. 2001,
pp. 4447.

[6] X. Zhou, K. Y. Lim, and W. Qian,
"Threshold voltage definition and extraction for deepsubmicron MOSFETs,"
SolidState Electron., Vol. 45, No. 3, pp. 507510, Apr. 2001.

[18] X. Zhou and K. Y. Lim, "Unified
MOSFET compact IV model formulation through physicsbased effective transformation,"
IEEE Trans. Electron Devices, Vol. 48, No. 5, pp. 887896, May 2001.

[7] X. Zhou, S. B. Chiah, K.
Y. Lim, Y. Wang, X. Yu, S. Chwa, A. See, and L. Chan, "Technologydependent
modeling of deepsubmicron MOSFET's and ULSI circuits," (Invited Paper),
Proc. 6th International Conference on SolidState and IntegratedCircuit
Technology (ICSICT2001), Shanghai, Oct. 2001, Vol. 2, pp. 855860.

[16] X. Zhou and K. Y. Lim, "Deembedding
lengthdependent edgeleakage current in shallow trench isolation submicron
MOSFETs," to appear in SolidState Electron., 2002.

[14] M.
Y. Kwong, C.H. Choi, R. Kasnavi, P. Griffin, R. D. Dutton, "Series
Resistance Calculation for Source/Drain Extension Regions Using 2D Device
Simulation," IEEE Trans. Electron Devices, Vol. 49, No. 7, pp. 12191226,
July 2002.
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