A Simple and Unambiguous Definition of Threshold
Voltage and Its Implications in DeepSubmicron MOS Device Modeling
X. Zhou, Member, IEEE, K. Y. Lim, Student Member,
IEEE, and D. Lim
IEEE Transactions on Electron Devices,
Vol. 46, No. 4, pp. 807809, April 1999.
(Manuscript received September 8, 1998; revised November 2, 1998)
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Abstract
A new definition of MOSFET threshold voltage is proposed, namely, the
"criticalcurrent at linearthreshold" method, which has a unique solution
and is very simple to measure. This definition gives consistent values
of threshold voltage for different regions of operation at long channel,
and contains the information on shortchannel effects at short channel,
which is very useful for deepsubmicron MOS device characterization and
modeling. The proposed method effectively removes ambiguity of de
facto industry standard of the constantcurrent method for MOS threshold
voltage.
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