A General Approach to Compact Threshold Voltage Formulation
Based on 2D Numerical Simulation and Experimental Correlation for DeepSubmicron
ULSI Technology Development
Xing Zhou, Senior Member, IEEE, Khee Yong Lim,
Student
Member, IEEE, and David Lim
IEEE Transactions on Electron Devices,
Vol. 47, No. 1, pp. 214221, January 2000.
(Manuscript received August 25, 1998; revised July 1, 1999.)
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Abstract
A unified compact threshold voltage model is developed, which accounts
for the normal and reverse shortchannel effects with full range of body
and drainbias conditions, and has been verified with experimental data
down to 0.18 µm. The model only has five processdependent
fitting parameters with a simple oneiteration extraction procedure, and
can be correlated to process variables for aiding new deepsubmicron technology
development. The approach to the model formulation is original and
general, and can be extended to other key device performance parameters.
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