“Ground-Referenced” Model for Three-Terminal Symmetric Double-Gate MOSFETs with Source/Drain Symmetry

Guojun Zhu, Guan Huei See, Student Member, IEEE, Shihuan Lin, and Xing Zhou, Senior Member, IEEE

IEEE Transactions on Electron Devices, Vol. 55, No. 9, pp. 2526-2530, September 2008.
(Manuscript submitted March 18, 2008; revised June 18, 2008.)

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This brief presents, for the first time, a “ground-referenced” model to satisfy the Gummel symmetry test (GST) in three-terminal MOSFETs without body contact.  Unlike four-terminal bulk MOSFETs in which the bulk Fermi potential is set by the body voltage, a paradigm change is needed to model the respective electron and hole imrefs referenced to ground rather than modeling the imref-split (referenced to source).  Together with the model consistency requirement for any reference voltages, the proposed formulations, as illustrated with undoped symmetric double-gate (s-DG) MOSFETs, provide a guide for formulating compact models with source–drain symmetry, which can also be easily extended to model unintentional or intentional source/drain asymmetry.