“Ground-Referenced” Model for
Three-Terminal Symmetric Double-Gate MOSFETs with Source/Drain Symmetry
Guojun Zhu, Guan Huei See, Student Member, IEEE, Shihuan
Lin, and Xing Zhou, Senior Member, IEEE
IEEE Transactions on Electron Devices,
55, No. 9, pp.
2526-2530, September 2008.
(Manuscript submitted March 18, 2008; revised
June 18, 2008.)
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This brief presents, for the first time, a “ground-referenced” model
to satisfy the Gummel symmetry test (GST) in three-terminal MOSFETs without
body contact. Unlike four-terminal bulk MOSFETs in which the bulk
Fermi potential is set by the body voltage, a paradigm change is needed
to model the respective electron and hole imrefs referenced to ground rather
than modeling the imref-split (referenced to source). Together with
the model consistency requirement for any reference voltages, the proposed
formulations, as illustrated with undoped symmetric double-gate (s-DG)
MOSFETs, provide a guide for formulating compact models with source–drain
symmetry, which can also be easily extended to model unintentional or intentional
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